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dc.creatorNikolić, Pantelija M.
dc.creatorParaskevopoulos, Konstantinos M.
dc.creatorPavlidou, Eleni
dc.creatorZorba, Triantafyllia T.
dc.creatorIvetić, Tamara
dc.creatorVujatović, Stevan S.
dc.creatorAleksić, Obrad S.
dc.creatorNikolić, N.
dc.creatorCvetković, Olga
dc.creatorBlagojević, Vladimir D.
dc.creatorNikolić, Maria Vesna
dc.date.accessioned2017-06-10T15:45:07Z
dc.date.issued2011
dc.identifier.issn0254-0584
dc.identifier.urihttps://dais.sanu.ac.rs/123456789/734
dc.description.abstractFar infrared reflectivity spectra of polycrystalline In1−xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperaturesen
dc.format(2011) 72-76
dc.languageen
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/142011/RS//
dc.rightsrestrictedAccess
dc.sourceMaterials Chemistry and Physicsen
dc.subjectsemiconductors
dc.subjectFTIR
dc.subjectoptical properties
dc.subjectphonons
dc.titleTemperature dependence of In1−xGaxSb reflectivity in the far infrareden
dc.typearticle
dc.rights.licenseARR
dcterms.abstractНиколић, Пантелија; Параскевопоулос, К. М.; Павлидоу, Е.; Зорба, Т. Т.; Николић, Мариа Весна; Вујатовић, С. С.; Aлексић, Обрад; Николић, Н.; Цветковић, О.; Благојевић, В.; Иветић, Тамара;
dc.citation.spage72
dc.citation.epage76
dc.identifier.wos000285285100013
dc.identifier.doi10.1016/j.matchemphys.2010.08.073
dc.identifier.scopus2-s2.0-78049283876
dc.type.versionpublishedVersion
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_dais_734


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