Temperature dependence of In1−xGaxSb reflectivity in the far infrared
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Аутори
Nikolić, Pantelija M.
Paraskevopoulos, Konstantinos M.

Pavlidou, Eleni
Zorba, Triantafyllia T.

Ivetić, Tamara

Vujatović, Stevan S.
Aleksić, Obrad S.
Nikolić, N.
Cvetković, Olga

Blagojević, Vladimir D.
Nikolić, Maria Vesna

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Far infrared reflectivity spectra of polycrystalline In1−xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures
Кључне речи:
semiconductors / FTIR / optical properties / phononsИзвор:
Materials Chemistry and Physics, 2011, 72-76Пројекти:
- Проучавање међузависности у тријади ''синтеза-структура-својства'' за функционалне материјала (RS-142011)