Temperature dependence of In1−xGaxSb reflectivity in the far infrared
Само за регистроване кориснике
Аутори
Nikolić, Pantelija M.
Paraskevopoulos, Konstantinos M.
Pavlidou, Eleni
Zorba, Triantafyllia T.
Ivetić, Tamara
Vujatović, Stevan S.
Aleksić, Obrad S.
Nikolić, N.
Cvetković, Olga
Blagojević, Vladimir D.
Nikolić, Maria Vesna
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Far infrared reflectivity spectra of polycrystalline In1−xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures
Кључне речи:
semiconductors / FTIR / optical properties / phononsИзвор:
Materials Chemistry and Physics, 2011, 72-76Пројекти:
- Проучавање међузависности у тријади ''синтеза-структура-својства'' за функционалне материјала (RS-142011)