Temperature dependence of In1−xGaxSb reflectivity in the far infrared

Nikolić, Pantelija; Paraskevopoulos, Konstantinos M.; Pavlidou, Eleni; Zorba, T. T.; Ivetić, Tamara; Vujatović, Stevan S.; Aleksić, Obrad; Nikolić, N.; Cvetković, O.; Blagojević, Vladimir; Nikolić, Maria Vesna

2011

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Аутори

Nikolić, Pantelija

Paraskevopoulos, Konstantinos M.

Pavlidou, Eleni
Zorba, T. T.
Ivetić, Tamara

Vujatović, Stevan S.
Aleksić, Obrad
Nikolić, N.
Cvetković, O.
Blagojević, Vladimir
Nikolić, Maria Vesna

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Апстракт

Far infrared reflectivity spectra of polycrystalline In1−xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures

Кључне речи:

semiconductors / FTIR / optical properties / phonons

Извор:
Materials Chemistry and Physics, 2011, 72-76

Пројекти:

MSTD Projects 2006-2010 - 142011G Investigation of the relation in triad: synthesis-structure-properties for functional materials

DOI: 10.1016/j.matchemphys.2010.08.073