dc.creator | Todorović, D. M. | |
dc.creator | Nikolić, Pantelija M. | |
dc.creator | Smiljanić, Miloljub | |
dc.creator | Bojičić, Aleksandar I. | |
dc.creator | Vasiljević Radović, Dana | |
dc.creator | Radulović, Katarina | |
dc.date.accessioned | 2020-11-25T17:39:12Z | |
dc.date.available | 2020-11-25T17:39:12Z | |
dc.date.issued | 2002 | |
dc.identifier.uri | https://dais.sanu.ac.rs/123456789/9552 | |
dc.description.abstract | The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor. | en |
dc.publisher | IEEE Computer Society | |
dc.rights | restrictedAccess | |
dc.source | 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings | |
dc.subject | semiconductors | |
dc.subject | PVDF | |
dc.subject | pyro-piezo-electric effects | |
dc.title | Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure | en |
dc.type | conferenceObject | |
dc.rights.license | ARR | |
dcterms.abstract | Николић, Пантелија М.; Васиљевић Радовић, Дана; Радуловић, Катарина; Тодоровић, Д. М.; Смиљанић, Милољуб; Бојичић, Aлександар И.; | |
dc.citation.spage | 231 | |
dc.citation.epage | 234 | |
dc.citation.volume | 1 | |
dc.identifier.doi | 10.1109/MIEL.2002.1003182 | |
dc.identifier.scopus | 2-s2.0-84906665867 | |
dc.type.version | publishedVersion | |
dc.identifier.rcub | https://hdl.handle.net/21.15107/rcub_dais_9552 | |