Far infrared study of local impurity modes of Boron-doped PbTe
Samo za registrovane korisnike
2012
Autori
Nikolić, Pantelija M.Paraskevopoulos, Konstantinos M.
Zachariadis, G.
Valasiadis, O.
Zorba, Triantafyllia T.
Vujatović, Stevan S.
Nikolić, N.
Aleksić, Obrad S.
Ivetić, Tamara
Cvetković, Olga
Blagojević, Vladimir D.
Nikolić, Maria Vesna
Članak u časopisu (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.
Ključne reči:
far infrared spectroscopy / PbTe single crystals / boron dopingIzvor:
Journal of Materials Science, 2012, 47, 5, 2384-2389Izdavač:
- Springer US
Finansiranje / projekti:
DOI: 10.1007/s10853-011-6057-8
ISSN: 0022-2461 (Print); 1573-4803
WoS: 000299081500045
Scopus: 2-s2.0-84857647432
Institucija/grupa
Институт техничких наука САНУ / Institute of Technical Sciences of SASATY - JOUR AU - Nikolić, Pantelija M. AU - Paraskevopoulos, Konstantinos M. AU - Zachariadis, G. AU - Valasiadis, O. AU - Zorba, Triantafyllia T. AU - Vujatović, Stevan S. AU - Nikolić, N. AU - Aleksić, Obrad S. AU - Ivetić, Tamara AU - Cvetković, Olga AU - Blagojević, Vladimir D. AU - Nikolić, Maria Vesna PY - 2012 UR - https://dais.sanu.ac.rs/123456789/483 AB - PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed. PB - Springer US T2 - Journal of Materials Science T1 - Far infrared study of local impurity modes of Boron-doped PbTe SP - 2384 EP - 2389 VL - 47 VL - 47 IS - 5 IS - 5 DO - 10.1007/s10853-011-6057-8 UR - https://hdl.handle.net/21.15107/rcub_dais_483 ER -
@article{ author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Zachariadis, G. and Valasiadis, O. and Zorba, Triantafyllia T. and Vujatović, Stevan S. and Nikolić, N. and Aleksić, Obrad S. and Ivetić, Tamara and Cvetković, Olga and Blagojević, Vladimir D. and Nikolić, Maria Vesna", year = "2012", abstract = "PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.", publisher = "Springer US", journal = "Journal of Materials Science", title = "Far infrared study of local impurity modes of Boron-doped PbTe", pages = "2384-2389", volume = "47, 47", number = "5, 5", doi = "10.1007/s10853-011-6057-8", url = "https://hdl.handle.net/21.15107/rcub_dais_483" }
Nikolić, P. M., Paraskevopoulos, K. M., Zachariadis, G., Valasiadis, O., Zorba, T. T., Vujatović, S. S., Nikolić, N., Aleksić, O. S., Ivetić, T., Cvetković, O., Blagojević, V. D.,& Nikolić, M. V.. (2012). Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science Springer US., 47(5), 2384-2389. https://doi.org/10.1007/s10853-011-6057-8 https://hdl.handle.net/21.15107/rcub_dais_483
Nikolić PM, Paraskevopoulos KM, Zachariadis G, Valasiadis O, Zorba TT, Vujatović SS, Nikolić N, Aleksić OS, Ivetić T, Cvetković O, Blagojević VD, Nikolić MV. Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science. 2012;47(5):2384-2389. doi:10.1007/s10853-011-6057-8 https://hdl.handle.net/21.15107/rcub_dais_483 .
Nikolić, Pantelija M., Paraskevopoulos, Konstantinos M., Zachariadis, G., Valasiadis, O., Zorba, Triantafyllia T., Vujatović, Stevan S., Nikolić, N., Aleksić, Obrad S., Ivetić, Tamara, Cvetković, Olga, Blagojević, Vladimir D., Nikolić, Maria Vesna, "Far infrared study of local impurity modes of Boron-doped PbTe" in Journal of Materials Science, 47, no. 5 (2012):2384-2389, https://doi.org/10.1007/s10853-011-6057-8 ., https://hdl.handle.net/21.15107/rcub_dais_483 .