Investigation of ion-beam modified silicon by photoacoustic method
Samo za registrovane korisnike
2000
Autori
Todorović, D. M.Nikolić, Pantelija M.
Elazar, J.
Smiljanić, M.
Bojičić, Aleksandar I.
Vasiljević Radović, Dana
Radulović, Katarina
Konferencijski prilog (Objavljena verzija)
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.
Ključne reči:
photoacoustic method / ion-modified siliconIzvor:
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 247-250Izdavač:
- IEEE
Institucija/grupa
Институт техничких наука САНУ / Institute of Technical Sciences of SASATY - CONF AU - Todorović, D. M. AU - Nikolić, Pantelija M. AU - Elazar, J. AU - Smiljanić, M. AU - Bojičić, Aleksandar I. AU - Vasiljević Radović, Dana AU - Radulović, Katarina PY - 2000 UR - https://dais.sanu.ac.rs/123456789/3869 AB - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE. PB - IEEE C3 - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings T1 - Investigation of ion-beam modified silicon by photoacoustic method SP - 247 EP - 250 VL - 1 DO - 10.1109/ICMEL.2000.840566 UR - https://hdl.handle.net/21.15107/rcub_dais_3869 ER -
@conference{ author = "Todorović, D. M. and Nikolić, Pantelija M. and Elazar, J. and Smiljanić, M. and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina", year = "2000", abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.", publisher = "IEEE", journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings", title = "Investigation of ion-beam modified silicon by photoacoustic method", pages = "247-250", volume = "1", doi = "10.1109/ICMEL.2000.840566", url = "https://hdl.handle.net/21.15107/rcub_dais_3869" }
Todorović, D. M., Nikolić, P. M., Elazar, J., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings IEEE., 1, 247-250. https://doi.org/10.1109/ICMEL.2000.840566 https://hdl.handle.net/21.15107/rcub_dais_3869
Todorović DM, Nikolić PM, Elazar J, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250. doi:10.1109/ICMEL.2000.840566 https://hdl.handle.net/21.15107/rcub_dais_3869 .
Todorović, D. M., Nikolić, Pantelija M., Elazar, J., Smiljanić, M., Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250, https://doi.org/10.1109/ICMEL.2000.840566 ., https://hdl.handle.net/21.15107/rcub_dais_3869 .