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Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure

Authorized Users Only
2002
Authors
Todorović, D. M.
Nikolić, Pantelija M.
Smiljanić, Miloljub
Bojičić, Aleksandar I.
Vasiljević Radović, Dana
Radulović, Katarina
Conference object (Published version)
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Abstract
The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
Keywords:
semiconductors / PVDF / pyro-piezo-electric effects
Source:
23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 2002, 1, 231-234
Publisher:
  • IEEE Computer Society

DOI: 10.1109/MIEL.2002.1003182

Scopus: 2-s2.0-84906665867
[ Google Scholar ]
Handle
https://hdl.handle.net/21.15107/rcub_dais_9552
URI
https://dais.sanu.ac.rs/123456789/9552
Collections
  • ИТН САНУ - Општа колекција / ITS SASA - General collection
Institution/Community
Институт техничких наука САНУ / Institute of Technical Sciences of SASA
TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Smiljanić, Miloljub
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2002
UR  - https://dais.sanu.ac.rs/123456789/9552
AB  - The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure
SP  - 231
EP  - 234
VL  - 1
DO  - 10.1109/MIEL.2002.1003182
UR  - https://hdl.handle.net/21.15107/rcub_dais_9552
ER  - 
@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Smiljanić, Miloljub and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2002",
abstract = "The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure",
pages = "231-234",
volume = "1",
doi = "10.1109/MIEL.2002.1003182",
url = "https://hdl.handle.net/21.15107/rcub_dais_9552"
}
Todorović, D. M., Nikolić, P. M., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2002). Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 231-234.
https://doi.org/10.1109/MIEL.2002.1003182
https://hdl.handle.net/21.15107/rcub_dais_9552
Todorović DM, Nikolić PM, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:231-234.
doi:10.1109/MIEL.2002.1003182
https://hdl.handle.net/21.15107/rcub_dais_9552 .
Todorović, D. M., Nikolić, Pantelija M., Smiljanić, Miloljub, Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):231-234,
https://doi.org/10.1109/MIEL.2002.1003182 .,
https://hdl.handle.net/21.15107/rcub_dais_9552 .

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