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dc.creatorShcherba, I. D.
dc.creatorAntonov, V. N.
dc.creatorZhak, O. V.
dc.creatorBekenov, L. V.
dc.creatorKovalska, M. V.
dc.creatorNoga, H.
dc.creatorUskoković, Dragan
dc.creatorYatcyk, B. M.
dc.date.accessioned2020-01-04T10:02:36Z
dc.date.available2020-01-04T10:02:36Z
dc.date.issued2019
dc.identifier.isbn10274642, 23100052
dc.identifier.issn1027-4642
dc.identifier.issn2310-0052
dc.identifier.urihttp://physics.lnu.edu.ua/jps/2019/2/abs/a2301-7.html
dc.identifier.urihttp://dais.sanu.ac.rs/123456789/6952
dc.description.abstractThe valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.en
dc.publisherWest Ukrainian Physical Society
dc.rightsopenAccess
dc.sourceJournal of Physical Studies
dc.titleElectronic structure and X-ray spectroscopic properties of the HfFe2Si2 compounden
dc.typearticleen
dc.rights.licenseBY
dcterms.abstractКовалска, М. В.; Зхак, О. В.; Бекенов, Л. В.; Схцхерба, И. Д.; Yатцyк, Б. М.; Aнтонов, В. Н.; Ускоковић, Драган; Нога, Х.;
dc.citation.volume23
dc.citation.issue2
dc.identifier.wos000470090800002
dc.identifier.doi10.30970/jps.23.2301
dc.identifier.scopus2-s2.0-85070737317
dc.type.versionpublishedVersion
dc.identifier.fulltexthttp://dais.sanu.ac.rs/bitstream/id/27636/2301-7.pdf


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