The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.
TY - JOUR
AU - Shcherba, I. D.
AU - Antonov, V. N.
AU - Zhak, O. V.
AU - Bekenov, L. V.
AU - Kovalska, M. V.
AU - Noga, H.
AU - Uskoković, Dragan
AU - Yatcyk, B. M.
PY - 2019
UR - http://physics.lnu.edu.ua/jps/2019/2/abs/a2301-7.html
UR - https://dais.sanu.ac.rs/123456789/6952
AB - The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.
PB - West Ukrainian Physical Society
T2 - Journal of Physical Studies
T1 - Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound
VL - 23
IS - 2
DO - 10.30970/jps.23.2301
UR - https://hdl.handle.net/21.15107/rcub_dais_6952
ER -
@article{
author = "Shcherba, I. D. and Antonov, V. N. and Zhak, O. V. and Bekenov, L. V. and Kovalska, M. V. and Noga, H. and Uskoković, Dragan and Yatcyk, B. M.",
year = "2019",
abstract = "The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.",
publisher = "West Ukrainian Physical Society",
journal = "Journal of Physical Studies",
title = "Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound",
volume = "23",
number = "2",
doi = "10.30970/jps.23.2301",
url = "https://hdl.handle.net/21.15107/rcub_dais_6952"
}
Shcherba, I. D., Antonov, V. N., Zhak, O. V., Bekenov, L. V., Kovalska, M. V., Noga, H., Uskoković, D.,& Yatcyk, B. M.. (2019). Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound. in Journal of Physical Studies
West Ukrainian Physical Society., 23(2).
https://doi.org/10.30970/jps.23.2301
https://hdl.handle.net/21.15107/rcub_dais_6952
Shcherba ID, Antonov VN, Zhak OV, Bekenov LV, Kovalska MV, Noga H, Uskoković D, Yatcyk BM. Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound. in Journal of Physical Studies. 2019;23(2).
doi:10.30970/jps.23.2301
https://hdl.handle.net/21.15107/rcub_dais_6952 .
Shcherba, I. D., Antonov, V. N., Zhak, O. V., Bekenov, L. V., Kovalska, M. V., Noga, H., Uskoković, Dragan, Yatcyk, B. M., "Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound" in Journal of Physical Studies, 23, no. 2 (2019),
https://doi.org/10.30970/jps.23.2301 .,
https://hdl.handle.net/21.15107/rcub_dais_6952 .
