Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound

2019
Authors
Shcherba, I. D.Antonov, V. N.
Zhak, O. V.
Bekenov, L. V.
Kovalska, M. V.
Noga, H.
Uskoković, Dragan

Yatcyk, B. M.
Article (Published version)
Metadata
Show full item recordAbstract
The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.
Source:
Journal of Physical Studies, 2019, 23, 2Publisher:
- West Ukrainian Physical Society
DOI: 10.30970/jps.23.2301
ISBN: 10274642, 23100052
ISSN: 1027-4642; 2310-0052