Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound

2019
Authors
Shcherba, I. D.Antonov, V. N.
Zhak, O. V.
Bekenov, L. V.
Kovalska, M. V.
Noga, H.
Uskoković, Dragan

Yatcyk, B. M.
Article (Published version)
Metadata
Show full item recordAbstract
The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.
Source:
Journal of Physical Studies, 2019, 23, 2Publisher:
- West Ukrainian Physical Society
DOI: 10.30970/jps.23.2301
ISBN: 10274642, 23100052
ISSN: 1027-4642; 2310-0052
WoS: 000470090800002
Scopus: 2-s2.0-85070737317
Institution/Community
Институт техничких наука САНУ / Institute of Technical Sciences of SASATY - JOUR AU - Shcherba, I. D. AU - Antonov, V. N. AU - Zhak, O. V. AU - Bekenov, L. V. AU - Kovalska, M. V. AU - Noga, H. AU - Uskoković, Dragan AU - Yatcyk, B. M. PY - 2019 UR - http://physics.lnu.edu.ua/jps/2019/2/abs/a2301-7.html UR - https://dais.sanu.ac.rs/123456789/6952 AB - The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement. PB - West Ukrainian Physical Society T2 - Journal of Physical Studies T1 - Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound VL - 23 IS - 2 DO - 10.30970/jps.23.2301 UR - https://hdl.handle.net/21.15107/rcub_dais_6952 ER -
@article{ author = "Shcherba, I. D. and Antonov, V. N. and Zhak, O. V. and Bekenov, L. V. and Kovalska, M. V. and Noga, H. and Uskoković, Dragan and Yatcyk, B. M.", year = "2019", abstract = "The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.", publisher = "West Ukrainian Physical Society", journal = "Journal of Physical Studies", title = "Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound", volume = "23", number = "2", doi = "10.30970/jps.23.2301", url = "https://hdl.handle.net/21.15107/rcub_dais_6952" }
Shcherba, I. D., Antonov, V. N., Zhak, O. V., Bekenov, L. V., Kovalska, M. V., Noga, H., Uskoković, D.,& Yatcyk, B. M.. (2019). Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound. in Journal of Physical Studies West Ukrainian Physical Society., 23(2). https://doi.org/10.30970/jps.23.2301 https://hdl.handle.net/21.15107/rcub_dais_6952
Shcherba ID, Antonov VN, Zhak OV, Bekenov LV, Kovalska MV, Noga H, Uskoković D, Yatcyk BM. Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound. in Journal of Physical Studies. 2019;23(2). doi:10.30970/jps.23.2301 https://hdl.handle.net/21.15107/rcub_dais_6952 .
Shcherba, I. D., Antonov, V. N., Zhak, O. V., Bekenov, L. V., Kovalska, M. V., Noga, H., Uskoković, Dragan, Yatcyk, B. M., "Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound" in Journal of Physical Studies, 23, no. 2 (2019), https://doi.org/10.30970/jps.23.2301 ., https://hdl.handle.net/21.15107/rcub_dais_6952 .