Statistical Analysis of the Influence of Temperature on Microstructure Contact Surfaces on BaTiO3 -ceramics Doped with Ho2O3

Abstract

The materials based on BaTiO3 can be controlled using different technological parameters and different additives. We investigate the influence of different temperature levels of sintering (1320°C, 1350°C and 1380°C) on the size of contact area for 0.1% Ho2O3 doped BaTiO3 ceramic. Microstructural investigations were carried out using scanning electron microscopy (JEOL-JSM 5300) equipped with EDS (QX 2000S) system. Grain size distribution was determined by quantitative metallography method. The new correlation between microstructure and dielectric properties of doped BaTiO3-ceramics based on fractal geometry and contact surface probability is recently developed. The presented results indicate that statistical model of contact surfaces is very important for the prognosis of BaTiO3-ceramics microstructure and dielectric properties.