Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
Keywords:
photoacoustic measurements / heat-transmission / semiconductors / Ge single crystal
TY - JOUR
AU - Dramićanin, Miroslav
AU - Ristovski, Z.
AU - Nikolić, Pantelija M.
AU - Vasiljević, D.
AU - Todorović, D.
PY - 1995
UR - http://dais.sanu.ac.rs/123456789/569
AB - Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
PB - The American Physical Society
T2 - Physical Review B
T1 - Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
SP - 14226
EP - 14232
DO - 10.1103/PhysRevB.51.14226
ER -
@article{
author = "Dramićanin, Miroslav and Ristovski, Z. and Nikolić, Pantelija M. and Vasiljević, D. and Todorović, D.",
year = "1995",
url = "http://dais.sanu.ac.rs/123456789/569",
abstract = "Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.",
publisher = "The American Physical Society",
journal = "Physical Review B",
title = "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal",
pages = "14226-14232",
doi = "10.1103/PhysRevB.51.14226"
}
Dramićanin M, Ristovski Z, Nikolić PM, Vasiljević D, Todorović D. Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. Physical Review B. 1995;:14226-14232
Dramićanin, M., Ristovski, Z., Nikolić, P. M., Vasiljević, D.,& Todorović, D. (1995). Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal.
Physical Review BThe American Physical Society., null, 14226-14232.
https://doi.org/10.1103/PhysRevB.51.14226
Dramićanin Miroslav, Ristovski Z., Nikolić Pantelija M., Vasiljević D., Todorović D., "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal" null (1995):14226-14232,
https://doi.org/10.1103/PhysRevB.51.14226 .
