PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.
Keywords:
far infrared spectroscopy / PbTe single crystals / boron doping
Source:
Journal of Materials Science, 2012, 47, 5, 2384-2389
TY - JOUR
AU - Nikolić, Pantelija M.
AU - Paraskevopoulos, Konstantinos M.
AU - Zachariadis, G.
AU - Valasiadis, O.
AU - Zorba, Triantafyllia T.
AU - Vujatović, Stevan S.
AU - Nikolić, N.
AU - Aleksić, Obrad S.
AU - Ivetić, Tamara
AU - Cvetković, Olga
AU - Blagojević, Vladimir D.
AU - Nikolić, Maria Vesna
PY - 2012
UR - https://dais.sanu.ac.rs/123456789/483
AB - PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.
PB - Springer US
T2 - Journal of Materials Science
T1 - Far infrared study of local impurity modes of Boron-doped PbTe
SP - 2384
EP - 2389
VL - 47
VL - 47
IS - 5
IS - 5
DO - 10.1007/s10853-011-6057-8
UR - https://hdl.handle.net/21.15107/rcub_dais_483
ER -
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Zachariadis, G. and Valasiadis, O. and Zorba, Triantafyllia T. and Vujatović, Stevan S. and Nikolić, N. and Aleksić, Obrad S. and Ivetić, Tamara and Cvetković, Olga and Blagojević, Vladimir D. and Nikolić, Maria Vesna",
year = "2012",
abstract = "PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.",
publisher = "Springer US",
journal = "Journal of Materials Science",
title = "Far infrared study of local impurity modes of Boron-doped PbTe",
pages = "2384-2389",
volume = "47, 47",
number = "5, 5",
doi = "10.1007/s10853-011-6057-8",
url = "https://hdl.handle.net/21.15107/rcub_dais_483"
}
Nikolić, P. M., Paraskevopoulos, K. M., Zachariadis, G., Valasiadis, O., Zorba, T. T., Vujatović, S. S., Nikolić, N., Aleksić, O. S., Ivetić, T., Cvetković, O., Blagojević, V. D.,& Nikolić, M. V.. (2012). Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science
Springer US., 47(5), 2384-2389.
https://doi.org/10.1007/s10853-011-6057-8
https://hdl.handle.net/21.15107/rcub_dais_483
Nikolić PM, Paraskevopoulos KM, Zachariadis G, Valasiadis O, Zorba TT, Vujatović SS, Nikolić N, Aleksić OS, Ivetić T, Cvetković O, Blagojević VD, Nikolić MV. Far infrared study of local impurity modes of Boron-doped PbTe. in Journal of Materials Science. 2012;47(5):2384-2389.
doi:10.1007/s10853-011-6057-8
https://hdl.handle.net/21.15107/rcub_dais_483 .
Nikolić, Pantelija M., Paraskevopoulos, Konstantinos M., Zachariadis, G., Valasiadis, O., Zorba, Triantafyllia T., Vujatović, Stevan S., Nikolić, N., Aleksić, Obrad S., Ivetić, Tamara, Cvetković, Olga, Blagojević, Vladimir D., Nikolić, Maria Vesna, "Far infrared study of local impurity modes of Boron-doped PbTe" in Journal of Materials Science, 47, no. 5 (2012):2384-2389,
https://doi.org/10.1007/s10853-011-6057-8 .,
https://hdl.handle.net/21.15107/rcub_dais_483 .
