Investigation of ion-beam modified silicon by photoacoustic method

Todorović, D. M.; Nikolić, Pantelija M.; Elazar, J.; Smiljanić, M.; Bojičić, Aleksandar I.; Vasiljević Radović, Dana; Radulović, Katarina

doi:10.1109/ICMEL.2000.840566

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2000

Authors

Todorović, D. M.
Nikolić, Pantelija M.

Elazar, J.
Smiljanić, M.
Bojičić, Aleksandar I.
Vasiljević Radović, Dana

Radulović, Katarina

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Abstract

Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.

Keywords:

photoacoustic method / ion-modified silicon

Source:
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 247-250

Publisher:

IEEE

DOI: 10.1109/ICMEL.2000.840566

ISBN: 0-7803-5235-1

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Elazar, J.
AU  - Smiljanić, M.
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://dais.sanu.ac.rs/123456789/3869
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.
PB  - IEEE
C3  - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Investigation of ion-beam modified silicon by photoacoustic method
SP  - 247
EP  - 250
VL  - 1
DO  - 10.1109/ICMEL.2000.840566
UR  - https://hdl.handle.net/21.15107/rcub_dais_3869
ER  -

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Elazar, J. and Smiljanić, M. and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.",
publisher = "IEEE",
journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
pages = "247-250",
volume = "1",
doi = "10.1109/ICMEL.2000.840566",
url = "https://hdl.handle.net/21.15107/rcub_dais_3869"
}

Todorović, D. M., Nikolić, P. M., Elazar, J., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566
https://hdl.handle.net/21.15107/rcub_dais_3869

Todorović DM, Nikolić PM, Elazar J, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250.
doi:10.1109/ICMEL.2000.840566
https://hdl.handle.net/21.15107/rcub_dais_3869 .

Todorović, D. M., Nikolić, Pantelija M., Elazar, J., Smiljanić, M., Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 .,
https://hdl.handle.net/21.15107/rcub_dais_3869 .