The Schottky barrier contribution to photoacoustic effect in Au-Si system
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2000
Authors
Todorović, D. M.Nikolić, Pantelija M.
Smiljanić, M.
Petrović, R.
Bojičić, Aleksandar I.
Vasiljević Radović, Dana
Radulović, Katarina
Conference object (Published version)
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The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE.
Keywords:
Schottky barrier / photoacoustic effects / thermal transport / electronic transport / semiconductorsSource:
2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 189-192Publisher:
- IEEE
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