Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni

Nikolić, Pantelija M.; Vujatović, Stevan S.; Luković Golić, Danijela; Labus, Nebojša; Paraskevopoulos, Konstantinos M.; Zorbas, Kostas T.; Nikolić, Maria Vesna; Bojičić, Aleksandar I.; Blagojević, Vladimir D.; König, Wolfgang

doi:10.3139/146.101772

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2008

Authors

Nikolić, Pantelija M.

Vujatović, Stevan S.
Luković Golić, Danijela
Labus, Nebojša

Paraskevopoulos, Konstantinos M.

Zorbas, Kostas T.
Nikolić, Maria Vesna

Bojičić, Aleksandar I.
Blagojević, Vladimir D.
König, Wolfgang

Article (Published version)

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Abstract

Far infrared reflectivity spectra of single crystal Pb 0.85Sn0.15Te doped with Ni were measured in the temperature range between 10 K and 300 K. Analysis of the experimental spectra was made using a fitting procedure based on the modified model of plasmon-phonon interactions and the optical parameters were calculated. Two local modes were observed and their origin was discussed. © Carl Hanser Verlag GmbH & Co. KG.

Keywords:

far infrared reflectivity / impurity in semiconductors / PbSnTe

Source:
International Journal of Materials Research, 2008, 99, 12, 1393-1396

Publisher:

Carl Hanser Verlag

Projects:

Investigation of the relation in triad: Synthesis structure-properties for functional materials (RS-142011)

DOI: 10.3139/146.101772

ISSN: 1862-5282

WoS: 000262320100014