Dielectric Properties of BaTiO3 Ceramics and Curie-Weiss and Modified Curie-Weiss Affected by Fractal Morphology

Abstract

The purpose of this paper is to investigate the dielectric properties of Ho doped BaTiO3 ceramics at different dopant concentration and fractal correction related to fractal-like structure of the material. The Curie-Weiss and modified Curie-Weiss law is used to clarify the influence of dopant on the dielectric properties and phase transformation in BaTiO3. Doped BaTiO3 were prepared using conventional method of solid-state sintering at 1320°C for four hours. As BaTiO3 doped ceramics are concerned, SEM analysis has shown that in samples doped with a rare-earth ions (low level), the grain size is ranged from 20 to 40 m, while with the higher dopant concentration the abnormal grain growth is inhibited and the grain size is ranged between 2 and 10 m. Dielectric measurements were carried out as a function of temperature up to180°C. The low doped samples sintered at 1320°C, display the high value of dielectric permittivity, at room temperature 2300°C for 0.01Ho/BaTiO3. The Curie constant for all series of samples decreases with increase of dopant concentration and the lowest values were measured from samples doped with 0.01 wt% of aditive. © 2015 The American Ceramic Society. All rights reserved.