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dc.creatorNikolić, Pantelija M.
dc.creatorParaskevopoulos, Konstantinos M.
dc.creatorVujatović, Stevan S.
dc.creatorNikolić, Maria Vesna
dc.creatorChatzistavrou, Xanthippi
dc.creatorPavlidou, Eleni
dc.creatorIvetić, Tamara
dc.creatorBlagojević, Vladimir D.
dc.creatorBojičić, Aleksandar I.
dc.creatorDinulović, D.
dc.date.accessioned2018-07-06T16:58:07Z
dc.date.available2018-07-06T16:58:07Z
dc.date.issued2009
dc.identifier.issn0925-8388
dc.identifier.urihttps://dais.sanu.ac.rs/123456789/3466
dc.description.abstractSingle crystal samples of PbTe and PbSnTe doped with Cr were made using the Bridgman technique. Far infrared diagrams of PbTe samples doped with 0.4 at.%, 0.8 at.% and 1 at.% Cr and also of Pb0.9Sn0.1Te doped with 0.4 at.%, 0.7 at.% and 1.1 at.% Cr are presented and numerically analyzed. Local modes were determined at about 260 cm-1 and 480 cm-1 for PbTe doped with Cr and at slightly higher frequencies for PbSnTe doped with Cr. The origin of the local modes was discused about the possible application of the PbSnTe + Cr alloys. © 2009 Elsevier B.V. All rights reserved.en
dc.publisherElsevier
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/142011/RS//
dc.rightsrestrictedAccess
dc.sourceJournal of Alloys and Compounds
dc.subjectoptical spectroscopy
dc.subjectimpurities in semiconductors
dc.subjectsemiconductors
dc.titleOptical properties of PbTe and PbSnTe doped with Cren
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractИветић, Тамара; Благојевић, Владимир; Бојичић, A.; Динуловић, Д.; Николић, Пантелија М.; Параскевопоулос, Константинос М.; Вујатовић, Стеван С.; Николић, Мариа Весна; Цхатзиставроу, X.; Павлидоу, Елени;
dc.citation.spage893
dc.citation.epage896
dc.citation.volume480
dc.citation.issue2
dc.identifier.wos000267798600152
dc.identifier.doi10.1016/j.jallcom.2009.02.067
dc.identifier.scopus2-s2.0-67349266629
dc.type.versionpublishedVersion
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_dais_3466


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Приказ основних података о документу