Far infrared properties of PbTe doped with Hg
Authors
Nikolić, Pantelija M.
Vujatović, Stevan S.
Paraskevopoulos, Konstantinos M.
Pavlidou, Eleni
Zorba, Triantafyllia T.
Ivetić, Tamara
Cvetković, Olga
Aleksić, Obrad S.
Blagojević, Vladimir D.
Nikolić, Maria Vesna
Article (Published version)
Metadata
Show full item recordAbstract
Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Keywords:
infrared properties / Ag-doping / Hg-doping / PbTeSource:
Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153Publisher:
- Bucharest: Integra Natura Omnia et Aeterna
Projects:
- Investigation of the relation in triad: Synthesis structure-properties for functional materials (RS-142011)
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