Far infrared properties of PbTe doped with Hg
Authors
Nikolić, Pantelija M.
Vujatović, Stevan S.
Paraskevopoulos, Konstantinos M.

Pavlidou, Eleni
Zorba, Triantafyllia T.

Ivetić, Tamara

Cvetković, Olga

Aleksić, Obrad S.
Blagojević, Vladimir D.
Nikolić, Maria Vesna

Article (Published version)

Metadata
Show full item recordAbstract
Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Keywords:
infrared properties / Ag-doping / Hg-doping / PbTeSource:
Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153Publisher:
- Bucharest: Integra Natura Omnia et Aeterna
Funding / projects:
- Investigation of the relation in triad: Synthesis structure-properties for functional materials (RS-142011)
Institution/Community
Институт техничких наука САНУ / Institute of Technical Sciences of SASATY - JOUR AU - Nikolić, Pantelija M. AU - Vujatović, Stevan S. AU - Paraskevopoulos, Konstantinos M. AU - Pavlidou, Eleni AU - Zorba, Triantafyllia T. AU - Ivetić, Tamara AU - Cvetković, Olga AU - Aleksić, Obrad S. AU - Blagojević, Vladimir D. AU - Nikolić, Maria Vesna PY - 2010 UR - https://dais.sanu.ac.rs/123456789/3433 UR - https://oam-rc.inoe.ro/download.php?idu=942 AB - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg. PB - Bucharest: Integra Natura Omnia et Aeterna T2 - Optoelectronics and Advanced Materials, Rapid Communications T1 - Far infrared properties of PbTe doped with Hg SP - 151 EP - 153 VL - 4 IS - 2 UR - https://hdl.handle.net/21.15107/rcub_dais_3433 ER -
@article{ author = "Nikolić, Pantelija M. and Vujatović, Stevan S. and Paraskevopoulos, Konstantinos M. and Pavlidou, Eleni and Zorba, Triantafyllia T. and Ivetić, Tamara and Cvetković, Olga and Aleksić, Obrad S. and Blagojević, Vladimir D. and Nikolić, Maria Vesna", year = "2010", abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.", publisher = "Bucharest: Integra Natura Omnia et Aeterna", journal = "Optoelectronics and Advanced Materials, Rapid Communications", title = "Far infrared properties of PbTe doped with Hg", pages = "151-153", volume = "4", number = "2", url = "https://hdl.handle.net/21.15107/rcub_dais_3433" }
Nikolić, P. M., Vujatović, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetić, T., Cvetković, O., Aleksić, O. S., Blagojević, V. D.,& Nikolić, M. V.. (2010). Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications Bucharest: Integra Natura Omnia et Aeterna., 4(2), 151-153. https://hdl.handle.net/21.15107/rcub_dais_3433
Nikolić PM, Vujatović SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetić T, Cvetković O, Aleksić OS, Blagojević VD, Nikolić MV. Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153. https://hdl.handle.net/21.15107/rcub_dais_3433 .
Nikolić, Pantelija M., Vujatović, Stevan S., Paraskevopoulos, Konstantinos M., Pavlidou, Eleni, Zorba, Triantafyllia T., Ivetić, Tamara, Cvetković, Olga, Aleksić, Obrad S., Blagojević, Vladimir D., Nikolić, Maria Vesna, "Far infrared properties of PbTe doped with Hg" in Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153, https://hdl.handle.net/21.15107/rcub_dais_3433 .