Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
TY - JOUR
AU - Nikolić, Pantelija M.
AU - Vujatović, Stevan S.
AU - Paraskevopoulos, Konstantinos M.
AU - Pavlidou, Eleni
AU - Zorba, Triantafyllia T.
AU - Ivetić, Tamara
AU - Cvetković, Olga
AU - Aleksić, Obrad S.
AU - Blagojević, Vladimir D.
AU - Nikolić, Maria Vesna
PY - 2010
UR - http://dais.sanu.ac.rs/123456789/3433
UR - https://oam-rc.inoe.ro/download.php?idu=942
AB - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
PB - Bucharest: Integra Natura Omnia et Aeterna
T2 - Optoelectronics and Advanced Materials, Rapid Communications
T1 - Far infrared properties of PbTe doped with Hg
SP - 151
EP - 153
VL - 4
IS - 2
ER -
@article{
author = "Nikolić, Pantelija M. and Vujatović, Stevan S. and Paraskevopoulos, Konstantinos M. and Pavlidou, Eleni and Zorba, Triantafyllia T. and Ivetić, Tamara and Cvetković, Olga and Aleksić, Obrad S. and Blagojević, Vladimir D. and Nikolić, Maria Vesna",
year = "2010",
url = "http://dais.sanu.ac.rs/123456789/3433, https://oam-rc.inoe.ro/download.php?idu=942",
abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.",
publisher = "Bucharest: Integra Natura Omnia et Aeterna",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared properties of PbTe doped with Hg",
pages = "151-153",
volume = "4",
number = "2"
}
Nikolić PM, Vujatović SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetić T, Cvetković O, Aleksić OS, Blagojević VD, Nikolić MV. Far infrared properties of PbTe doped with Hg. Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153
Nikolić, P. M., Vujatović, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetić, T., Cvetković, O., Aleksić, O. S., Blagojević, V. D.,& Nikolić, M. V. (2010). Far infrared properties of PbTe doped with Hg.
Optoelectronics and Advanced Materials, Rapid CommunicationsBucharest: Integra Natura Omnia et Aeterna., 4(2), 151-153.
Nikolić Pantelija M., Vujatović Stevan S., Paraskevopoulos Konstantinos M., Pavlidou Eleni, Zorba Triantafyllia T., Ivetić Tamara, Cvetković Olga, Aleksić Obrad S., Blagojević Vladimir D., Nikolić Maria Vesna, "Far infrared properties of PbTe doped with Hg" 4, no. 2 (2010):151-153
