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Far infrared properties of PbTe doped with Hg

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2010
2NIKOLIC.pdf (160.9Kb)
Authors
Nikolić, Pantelija M.
Vujatović, Stevan S.
Paraskevopoulos, Konstantinos M.
Pavlidou, Eleni
Zorba, Triantafyllia T.
Ivetić, Tamara
Cvetković, Olga
Aleksić, Obrad S.
Blagojević, Vladimir D.
Nikolić, Maria Vesna
Article (Published version)
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Abstract
Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Keywords:
infrared properties / Ag-doping / Hg-doping / PbTe
Source:
Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153
Publisher:
  • Bucharest: Integra Natura Omnia et Aeterna
Funding / projects:
  • Investigation of the relation in triad: Synthesis structure-properties for functional materials (RS-142011)

ISSN: 1842-6573

Scopus: 2-s2.0-77952056143
[ Google Scholar ]
1
Handle
https://hdl.handle.net/21.15107/rcub_dais_3433
URI
https://dais.sanu.ac.rs/123456789/3433
https://oam-rc.inoe.ro/download.php?idu=942
Collections
  • ИТН САНУ - Општа колекција / ITS SASA - General collection
Institution/Community
Институт техничких наука САНУ / Institute of Technical Sciences of SASA
TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Vujatović, Stevan S.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, Eleni
AU  - Zorba, Triantafyllia T.
AU  - Ivetić, Tamara
AU  - Cvetković, Olga
AU  - Aleksić, Obrad S.
AU  - Blagojević, Vladimir D.
AU  - Nikolić, Maria Vesna
PY  - 2010
UR  - https://dais.sanu.ac.rs/123456789/3433
UR  - https://oam-rc.inoe.ro/download.php?idu=942
AB  - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
PB  - Bucharest: Integra Natura Omnia et Aeterna
T2  - Optoelectronics and Advanced Materials, Rapid Communications
T1  - Far infrared properties of PbTe doped with Hg
SP  - 151
EP  - 153
VL  - 4
IS  - 2
UR  - https://hdl.handle.net/21.15107/rcub_dais_3433
ER  - 
@article{
author = "Nikolić, Pantelija M. and Vujatović, Stevan S. and Paraskevopoulos, Konstantinos M. and Pavlidou, Eleni and Zorba, Triantafyllia T. and Ivetić, Tamara and Cvetković, Olga and Aleksić, Obrad S. and Blagojević, Vladimir D. and Nikolić, Maria Vesna",
year = "2010",
abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.",
publisher = "Bucharest: Integra Natura Omnia et Aeterna",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared properties of PbTe doped with Hg",
pages = "151-153",
volume = "4",
number = "2",
url = "https://hdl.handle.net/21.15107/rcub_dais_3433"
}
Nikolić, P. M., Vujatović, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetić, T., Cvetković, O., Aleksić, O. S., Blagojević, V. D.,& Nikolić, M. V.. (2010). Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications
Bucharest: Integra Natura Omnia et Aeterna., 4(2), 151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433
Nikolić PM, Vujatović SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetić T, Cvetković O, Aleksić OS, Blagojević VD, Nikolić MV. Far infrared properties of PbTe doped with Hg. in Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153.
https://hdl.handle.net/21.15107/rcub_dais_3433 .
Nikolić, Pantelija M., Vujatović, Stevan S., Paraskevopoulos, Konstantinos M., Pavlidou, Eleni, Zorba, Triantafyllia T., Ivetić, Tamara, Cvetković, Olga, Aleksić, Obrad S., Blagojević, Vladimir D., Nikolić, Maria Vesna, "Far infrared properties of PbTe doped with Hg" in Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153,
https://hdl.handle.net/21.15107/rcub_dais_3433 .

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