TY  - CONF
AU  - Scherba, Ivan
AU  - Kostyk, Lyudmyla V.
AU  - Noga, Henrik
AU  - Uskoković, Dragan
AU  - Bekenov, Lev V.
AU  - Denys, Vitalij
PY  - 2021
UR  - https://dais.sanu.ac.rs/123456789/12092
AB  - Crystals of Ca3Ga2Ge4O14 with the Ca-gallogermanate structure have a unique combination of physical properties - luminescent, laser, resilient, piezoelectric, and acoustic. Disordered trigonal compounds Ca3Ga2Ge4O14 activated with RE ions and transition elements are known as effective
materials of quantum electronics, which combine the functions of generation and transformation of laser irradiation frequency. It stimulated the study of spectral - luminescent properties of transitional and RE metals impurity ions in these materials. However, the electronic structure, matrix luminescence of Ca3Ga2Ge4O14 crystals have not been sufficiently studied. The crystals were grown by Czochralski technique in the atmosphere of argon with adding oxygen using platinum crucible. The X-ray emission spectra of Ga (Ge) and Ce (Eu)LIII-edge in the Ca3Ga2Ge4O14garnet with dopped Ce 3 % and Eu 4% were obtained by a tube-spectrometer with X-ray coordinate detector of the original design. OKα-spectra in the Ca3Ga2Ge4O14garnet were obtained by a SARF -spectrometer. Spectra of the core levels and the valence band in the Ca3Ga2Ge4O14were measured by the “Kratos” X-ray photoelectron spectrometer. The X-ray spectral studies of the Ca3Ga2Ge4O14have shown that the top of the valence band (near the Fermi level) is formed mainly by the outer electron p–states of Ga, Ge, and O, which intensity is sufficiently low. The middle of the valence band is formed by the Ga 3d–states with the О2s–states lying below them. These states are hybridized with the 4р–states of Ga and Ge because of which they are Кβ''–satellite in Кβ2– sub-band of Ga and Ge. The bottom of the valence band is formed by the 3d–states of germanium, which contribution in chemical binding is insignificant. Alignment of the X-ray emission bands of Ga and Ge with photoelectron spectrum of valence electrons of the Ca3Ga2Ge4O14demonstrated satisfactory correspondence.
PB  - Belgrade : Materials Research Society of Serbia
C3  - Programme and the Book of abstracts / Twenty-second Annual Conference YUCOMAT 2021 Herceg Novi, Montenegro, August 30 - September 3, 2021
T1  - X-ray properties spectroscopy and electron structure of Ca3Ga2Ge4O14 garnet with dopped Ce (Eu)
SP  - 101
EP  - 101
UR  - https://hdl.handle.net/21.15107/rcub_dais_12092
ER  - 

@conference{
author = "Scherba, Ivan and Kostyk, Lyudmyla V. and Noga, Henrik and Uskoković, Dragan and Bekenov, Lev V. and Denys, Vitalij",
year = "2021",
abstract = "Crystals of Ca3Ga2Ge4O14 with the Ca-gallogermanate structure have a unique combination of physical properties - luminescent, laser, resilient, piezoelectric, and acoustic. Disordered trigonal compounds Ca3Ga2Ge4O14 activated with RE ions and transition elements are known as effective
materials of quantum electronics, which combine the functions of generation and transformation of laser irradiation frequency. It stimulated the study of spectral - luminescent properties of transitional and RE metals impurity ions in these materials. However, the electronic structure, matrix luminescence of Ca3Ga2Ge4O14 crystals have not been sufficiently studied. The crystals were grown by Czochralski technique in the atmosphere of argon with adding oxygen using platinum crucible. The X-ray emission spectra of Ga (Ge) and Ce (Eu)LIII-edge in the Ca3Ga2Ge4O14garnet with dopped Ce 3 % and Eu 4% were obtained by a tube-spectrometer with X-ray coordinate detector of the original design. OKα-spectra in the Ca3Ga2Ge4O14garnet were obtained by a SARF -spectrometer. Spectra of the core levels and the valence band in the Ca3Ga2Ge4O14were measured by the “Kratos” X-ray photoelectron spectrometer. The X-ray spectral studies of the Ca3Ga2Ge4O14have shown that the top of the valence band (near the Fermi level) is formed mainly by the outer electron p–states of Ga, Ge, and O, which intensity is sufficiently low. The middle of the valence band is formed by the Ga 3d–states with the О2s–states lying below them. These states are hybridized with the 4р–states of Ga and Ge because of which they are Кβ''–satellite in Кβ2– sub-band of Ga and Ge. The bottom of the valence band is formed by the 3d–states of germanium, which contribution in chemical binding is insignificant. Alignment of the X-ray emission bands of Ga and Ge with photoelectron spectrum of valence electrons of the Ca3Ga2Ge4O14demonstrated satisfactory correspondence.",
publisher = "Belgrade : Materials Research Society of Serbia",
journal = "Programme and the Book of abstracts / Twenty-second Annual Conference YUCOMAT 2021 Herceg Novi, Montenegro, August 30 - September 3, 2021",
title = "X-ray properties spectroscopy and electron structure of Ca3Ga2Ge4O14 garnet with dopped Ce (Eu)",
pages = "101-101",
url = "https://hdl.handle.net/21.15107/rcub_dais_12092"
}

Scherba, I., Kostyk, L. V., Noga, H., Uskoković, D., Bekenov, L. V.,& Denys, V.. (2021). X-ray properties spectroscopy and electron structure of Ca3Ga2Ge4O14 garnet with dopped Ce (Eu). in Programme and the Book of abstracts / Twenty-second Annual Conference YUCOMAT 2021 Herceg Novi, Montenegro, August 30 - September 3, 2021
Belgrade : Materials Research Society of Serbia., 101-101.
https://hdl.handle.net/21.15107/rcub_dais_12092

Scherba I, Kostyk LV, Noga H, Uskoković D, Bekenov LV, Denys V. X-ray properties spectroscopy and electron structure of Ca3Ga2Ge4O14 garnet with dopped Ce (Eu). in Programme and the Book of abstracts / Twenty-second Annual Conference YUCOMAT 2021 Herceg Novi, Montenegro, August 30 - September 3, 2021. 2021;:101-101.
https://hdl.handle.net/21.15107/rcub_dais_12092 .

Scherba, Ivan, Kostyk, Lyudmyla V., Noga, Henrik, Uskoković, Dragan, Bekenov, Lev V., Denys, Vitalij, "X-ray properties spectroscopy and electron structure of Ca3Ga2Ge4O14 garnet with dopped Ce (Eu)" in Programme and the Book of abstracts / Twenty-second Annual Conference YUCOMAT 2021 Herceg Novi, Montenegro, August 30 - September 3, 2021 (2021):101-101,
https://hdl.handle.net/21.15107/rcub_dais_12092 .

TY  - JOUR
AU  - Shcherba, I. D.
AU  - Antonov, V. N.
AU  - Zhak, O. V.
AU  - Bekenov, L. V.
AU  - Kovalska, M. V.
AU  - Noga, Henrik
AU  - Uskoković, Dragan
AU  - Yatcyk, B. M.
PY  - 2019
UR  - http://physics.lnu.edu.ua/jps/2019/2/abs/a2301-7.html
UR  - https://dais.sanu.ac.rs/123456789/6952
AB  - The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.
PB  - West Ukrainian Physical Society
T2  - Journal of Physical Studies
T1  - Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound
VL  - 23
IS  - 2
DO  - 10.30970/jps.23.2301
UR  - https://hdl.handle.net/21.15107/rcub_dais_6952
ER  - 

@article{
author = "Shcherba, I. D. and Antonov, V. N. and Zhak, O. V. and Bekenov, L. V. and Kovalska, M. V. and Noga, Henrik and Uskoković, Dragan and Yatcyk, B. M.",
year = "2019",
abstract = "The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.",
publisher = "West Ukrainian Physical Society",
journal = "Journal of Physical Studies",
title = "Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound",
volume = "23",
number = "2",
doi = "10.30970/jps.23.2301",
url = "https://hdl.handle.net/21.15107/rcub_dais_6952"
}

Shcherba, I. D., Antonov, V. N., Zhak, O. V., Bekenov, L. V., Kovalska, M. V., Noga, H., Uskoković, D.,& Yatcyk, B. M.. (2019). Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound. in Journal of Physical Studies
West Ukrainian Physical Society., 23(2).
https://doi.org/10.30970/jps.23.2301
https://hdl.handle.net/21.15107/rcub_dais_6952

Shcherba ID, Antonov VN, Zhak OV, Bekenov LV, Kovalska MV, Noga H, Uskoković D, Yatcyk BM. Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound. in Journal of Physical Studies. 2019;23(2).
doi:10.30970/jps.23.2301
https://hdl.handle.net/21.15107/rcub_dais_6952 .

Shcherba, I. D., Antonov, V. N., Zhak, O. V., Bekenov, L. V., Kovalska, M. V., Noga, Henrik, Uskoković, Dragan, Yatcyk, B. M., "Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound" in Journal of Physical Studies, 23, no. 2 (2019),
https://doi.org/10.30970/jps.23.2301 .,
https://hdl.handle.net/21.15107/rcub_dais_6952 .

TY  - JOUR
AU  - Shcherba, Ivan D.
AU  - Kostyk, L. V.
AU  - Noga, Henrik
AU  - Bekenov, L. V.
AU  - Uskoković, Dragan
AU  - Jatsyk, B. M.
PY  - 2017
UR  - https://dais.sanu.ac.rs/123456789/2381
AB  - The band structure of Ca3Ga2Ge3О12 with the garnet structure has been determined for the first time by X-ray emission and photoelectron spectroscopy. It has been established that the bottom of the valence band is formed by Ge d states, which are not dominant in the chemical bonding. Strong hybridization of oxygen 2s states with 4p states of Ga and Ge revealed by the presence of an extra structure in the X-ray emission spectra has been found. The middle of the valence band has been demonstrated to be occupied by d states of Ga, while Ga and Ge 4рstates with a considerable admixture of oxygen 2p states form the top of the valence band.
T2  - Solid State Sciences
T1  - X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound
SP  - 1
EP  - 2
VL  - 71
DO  - 10.1016/j.solidstatesciences.2017.06.014
UR  - https://hdl.handle.net/21.15107/rcub_dais_2381
ER  - 

@article{
author = "Shcherba, Ivan D. and Kostyk, L. V. and Noga, Henrik and Bekenov, L. V. and Uskoković, Dragan and Jatsyk, B. M.",
year = "2017",
abstract = "The band structure of Ca3Ga2Ge3О12 with the garnet structure has been determined for the first time by X-ray emission and photoelectron spectroscopy. It has been established that the bottom of the valence band is formed by Ge d states, which are not dominant in the chemical bonding. Strong hybridization of oxygen 2s states with 4p states of Ga and Ge revealed by the presence of an extra structure in the X-ray emission spectra has been found. The middle of the valence band has been demonstrated to be occupied by d states of Ga, while Ga and Ge 4рstates with a considerable admixture of oxygen 2p states form the top of the valence band.",
journal = "Solid State Sciences",
title = "X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound",
pages = "1-2",
volume = "71",
doi = "10.1016/j.solidstatesciences.2017.06.014",
url = "https://hdl.handle.net/21.15107/rcub_dais_2381"
}

Shcherba, I. D., Kostyk, L. V., Noga, H., Bekenov, L. V., Uskoković, D.,& Jatsyk, B. M.. (2017). X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound. in Solid State Sciences, 71, 1-2.
https://doi.org/10.1016/j.solidstatesciences.2017.06.014
https://hdl.handle.net/21.15107/rcub_dais_2381

Shcherba ID, Kostyk LV, Noga H, Bekenov LV, Uskoković D, Jatsyk BM. X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound. in Solid State Sciences. 2017;71:1-2.
doi:10.1016/j.solidstatesciences.2017.06.014
https://hdl.handle.net/21.15107/rcub_dais_2381 .

Shcherba, Ivan D., Kostyk, L. V., Noga, Henrik, Bekenov, L. V., Uskoković, Dragan, Jatsyk, B. M., "X-ray spectra and electronic structure of the Ca3Ga2Ge3О12 compound" in Solid State Sciences, 71 (2017):1-2,
https://doi.org/10.1016/j.solidstatesciences.2017.06.014 .,
https://hdl.handle.net/21.15107/rcub_dais_2381 .

TY  - JOUR
AU  - Shcherba, Ivan D.
AU  - Bekenov, L. V.
AU  - Antonov, V. N.
AU  - Noga, Henrik
AU  - Uskoković, Dragan
AU  - Zhak, Olga
AU  - Kovalska, Maria V.
PY  - 2016
UR  - https://dais.sanu.ac.rs/123456789/16005
AB  - X-ray absorption spectrum at the Yb L3 edge and X-ray emission spectra of Ni and P at the K and L2,3 edges have been studied experimentally and theoretically in the mixed valent compound YbNi2P2 with ThCr2Si2 type crystal structure. The electronic structure of YbNi2P2 is investigated using the fully relativistic Dirac linear muffin-tin orbital (LMTO) band-structure method. The effect of the spin–orbit (SO) interaction and Coulomb repulsion U on the electronic structure of YbNi2P2 is examined in the frame of the LSDA + SO + U method. The core-hole effect in the final states as well as the effect of the electric quadrupole E2 transitions have been investigated. A good agreement between the theory and the experiment was found. Both the trivalent and the divalent Yb ions in YbNi2P2 are reflected in the experimentally measured Yb L3 X-ray absorption spectrum simultaneously. We found that the best agreement between the experimental spectrum and sum of the theoretically calculated Yb2+ and Yb3+ spectra is achieved with 73% ytterbium ions in 2+ state and 27% ions in 3+ state.
PB  - Elsevier
T2  - Journal of Electron Spectroscopy and Related Phenomena
T1  - Electronic structure and X-ray spectroscopic properties of YbNi2P2
SP  - 5
EP  - 10
VL  - 212
DO  - 10.1016/j.elspec.2016.07.002
UR  - https://hdl.handle.net/21.15107/rcub_dais_16005
ER  - 

@article{
author = "Shcherba, Ivan D. and Bekenov, L. V. and Antonov, V. N. and Noga, Henrik and Uskoković, Dragan and Zhak, Olga and Kovalska, Maria V.",
year = "2016",
abstract = "X-ray absorption spectrum at the Yb L3 edge and X-ray emission spectra of Ni and P at the K and L2,3 edges have been studied experimentally and theoretically in the mixed valent compound YbNi2P2 with ThCr2Si2 type crystal structure. The electronic structure of YbNi2P2 is investigated using the fully relativistic Dirac linear muffin-tin orbital (LMTO) band-structure method. The effect of the spin–orbit (SO) interaction and Coulomb repulsion U on the electronic structure of YbNi2P2 is examined in the frame of the LSDA + SO + U method. The core-hole effect in the final states as well as the effect of the electric quadrupole E2 transitions have been investigated. A good agreement between the theory and the experiment was found. Both the trivalent and the divalent Yb ions in YbNi2P2 are reflected in the experimentally measured Yb L3 X-ray absorption spectrum simultaneously. We found that the best agreement between the experimental spectrum and sum of the theoretically calculated Yb2+ and Yb3+ spectra is achieved with 73% ytterbium ions in 2+ state and 27% ions in 3+ state.",
publisher = "Elsevier",
journal = "Journal of Electron Spectroscopy and Related Phenomena",
title = "Electronic structure and X-ray spectroscopic properties of YbNi2P2",
pages = "5-10",
volume = "212",
doi = "10.1016/j.elspec.2016.07.002",
url = "https://hdl.handle.net/21.15107/rcub_dais_16005"
}

Shcherba, I. D., Bekenov, L. V., Antonov, V. N., Noga, H., Uskoković, D., Zhak, O.,& Kovalska, M. V.. (2016). Electronic structure and X-ray spectroscopic properties of YbNi2P2. in Journal of Electron Spectroscopy and Related Phenomena
Elsevier., 212, 5-10.
https://doi.org/10.1016/j.elspec.2016.07.002
https://hdl.handle.net/21.15107/rcub_dais_16005

Shcherba ID, Bekenov LV, Antonov VN, Noga H, Uskoković D, Zhak O, Kovalska MV. Electronic structure and X-ray spectroscopic properties of YbNi2P2. in Journal of Electron Spectroscopy and Related Phenomena. 2016;212:5-10.
doi:10.1016/j.elspec.2016.07.002
https://hdl.handle.net/21.15107/rcub_dais_16005 .

Shcherba, Ivan D., Bekenov, L. V., Antonov, V. N., Noga, Henrik, Uskoković, Dragan, Zhak, Olga, Kovalska, Maria V., "Electronic structure and X-ray spectroscopic properties of YbNi2P2" in Journal of Electron Spectroscopy and Related Phenomena, 212 (2016):5-10,
https://doi.org/10.1016/j.elspec.2016.07.002 .,
https://hdl.handle.net/21.15107/rcub_dais_16005 .