TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Vujatović, Stevan S.
AU  - Nikolić, Maria Vesna
AU  - Bojičić, Aleksandar I.
AU  - Zorba, Triantafyllia T.
AU  - Stamenović, Bojana
AU  - Blagojevic, Vladimir
AU  - Jović, Maja
AU  - Dašic, M.
AU  - König, Wolfgang
PY  - 2008
UR  - https://dais.sanu.ac.rs/123456789/3568
AB  - Single crystal samples of lead telluride doped with Gd were grown using the Bridgman method. Far infrared reflectivity spectra in the temperature range from 10 K to 300 K were measured. The experimental diagrams were numerically analyzed using a fitting procedure based on the plasma-phonon interaction model and the optical parameters were determined, while two local modes of gadolinium were observed at about 155 cm-1 and 230 cm-1 at room temperature. The origin of these local vibrational impurity modes was discussed. © 2008 Elsevier B.V. All rights reserved.
PB  - Elsevier
T2  - Materials Chemistry and Physics
T1  - Far infrared study of local impurity modes of Gd doped PbTe
SP  - 496
EP  - 499
VL  - 112
IS  - 2
DO  - 10.1016/j.matchemphys.2008.05.083
UR  - https://hdl.handle.net/21.15107/rcub_dais_3568
ER  - 

@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Vujatović, Stevan S. and Nikolić, Maria Vesna and Bojičić, Aleksandar I. and Zorba, Triantafyllia T. and Stamenović, Bojana and Blagojevic, Vladimir and Jović, Maja and Dašic, M. and König, Wolfgang",
year = "2008",
abstract = "Single crystal samples of lead telluride doped with Gd were grown using the Bridgman method. Far infrared reflectivity spectra in the temperature range from 10 K to 300 K were measured. The experimental diagrams were numerically analyzed using a fitting procedure based on the plasma-phonon interaction model and the optical parameters were determined, while two local modes of gadolinium were observed at about 155 cm-1 and 230 cm-1 at room temperature. The origin of these local vibrational impurity modes was discussed. © 2008 Elsevier B.V. All rights reserved.",
publisher = "Elsevier",
journal = "Materials Chemistry and Physics",
title = "Far infrared study of local impurity modes of Gd doped PbTe",
pages = "496-499",
volume = "112",
number = "2",
doi = "10.1016/j.matchemphys.2008.05.083",
url = "https://hdl.handle.net/21.15107/rcub_dais_3568"
}

Nikolić, P. M., Paraskevopoulos, K. M., Vujatović, S. S., Nikolić, M. V., Bojičić, A. I., Zorba, T. T., Stamenović, B., Blagojevic, V., Jović, M., Dašic, M.,& König, W.. (2008). Far infrared study of local impurity modes of Gd doped PbTe. in Materials Chemistry and Physics
Elsevier., 112(2), 496-499.
https://doi.org/10.1016/j.matchemphys.2008.05.083
https://hdl.handle.net/21.15107/rcub_dais_3568

Nikolić PM, Paraskevopoulos KM, Vujatović SS, Nikolić MV, Bojičić AI, Zorba TT, Stamenović B, Blagojevic V, Jović M, Dašic M, König W. Far infrared study of local impurity modes of Gd doped PbTe. in Materials Chemistry and Physics. 2008;112(2):496-499.
doi:10.1016/j.matchemphys.2008.05.083
https://hdl.handle.net/21.15107/rcub_dais_3568 .

Nikolić, Pantelija M., Paraskevopoulos, Konstantinos M., Vujatović, Stevan S., Nikolić, Maria Vesna, Bojičić, Aleksandar I., Zorba, Triantafyllia T., Stamenović, Bojana, Blagojevic, Vladimir, Jović, Maja, Dašic, M., König, Wolfgang, "Far infrared study of local impurity modes of Gd doped PbTe" in Materials Chemistry and Physics, 112, no. 2 (2008):496-499,
https://doi.org/10.1016/j.matchemphys.2008.05.083 .,
https://hdl.handle.net/21.15107/rcub_dais_3568 .

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Vujatović, Stevan S.
AU  - Bojičić, Aleksandar I.
AU  - Zorba, Triantafyllia T.
AU  - Nikolić, Maria Vesna
AU  - Stamenović, Bojana
AU  - Ivetić, Tamara
AU  - Blagojević, Vladimir D.
PY  - 2008
UR  - https://dais.sanu.ac.rs/123456789/3575
AB  - Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm-1 which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot. © 2008 Springer Science+Business Media, LLC.
PB  - Springer Science+Business Media
T2  - Journal of Materials Science
T1  - Far infrared properties of PbTe doped with Bismuth
SP  - 5516
EP  - 5520
VL  - 43
IS  - 16
DO  - 10.1007/s10853-008-2821-9
UR  - https://hdl.handle.net/21.15107/rcub_dais_3575
ER  - 

@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Vujatović, Stevan S. and Bojičić, Aleksandar I. and Zorba, Triantafyllia T. and Nikolić, Maria Vesna and Stamenović, Bojana and Ivetić, Tamara and Blagojević, Vladimir D.",
year = "2008",
abstract = "Far infrared reflectivity spectra of single crystal PbTe doped with Bi were measured and numerically analyzed using a fitting procedure based on a modified plasmon-phonon interaction model with two additional oscillators at about 140 and 219 cm-1 which represents local Bi impurity modes. The position of observed plasma minimum and the values of the calculated parameters were compared with the literature data for pure single crystal PbTe which shows that bismuth improved the basic properties of the host crystal a lot. © 2008 Springer Science+Business Media, LLC.",
publisher = "Springer Science+Business Media",
journal = "Journal of Materials Science",
title = "Far infrared properties of PbTe doped with Bismuth",
pages = "5516-5520",
volume = "43",
number = "16",
doi = "10.1007/s10853-008-2821-9",
url = "https://hdl.handle.net/21.15107/rcub_dais_3575"
}

Nikolić, P. M., Paraskevopoulos, K. M., Vujatović, S. S., Bojičić, A. I., Zorba, T. T., Nikolić, M. V., Stamenović, B., Ivetić, T.,& Blagojević, V. D.. (2008). Far infrared properties of PbTe doped with Bismuth. in Journal of Materials Science
Springer Science+Business Media., 43(16), 5516-5520.
https://doi.org/10.1007/s10853-008-2821-9
https://hdl.handle.net/21.15107/rcub_dais_3575

Nikolić PM, Paraskevopoulos KM, Vujatović SS, Bojičić AI, Zorba TT, Nikolić MV, Stamenović B, Ivetić T, Blagojević VD. Far infrared properties of PbTe doped with Bismuth. in Journal of Materials Science. 2008;43(16):5516-5520.
doi:10.1007/s10853-008-2821-9
https://hdl.handle.net/21.15107/rcub_dais_3575 .

Nikolić, Pantelija M., Paraskevopoulos, Konstantinos M., Vujatović, Stevan S., Bojičić, Aleksandar I., Zorba, Triantafyllia T., Nikolić, Maria Vesna, Stamenović, Bojana, Ivetić, Tamara, Blagojević, Vladimir D., "Far infrared properties of PbTe doped with Bismuth" in Journal of Materials Science, 43, no. 16 (2008):5516-5520,
https://doi.org/10.1007/s10853-008-2821-9 .,
https://hdl.handle.net/21.15107/rcub_dais_3575 .

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Vujatović, Stevan S.
AU  - Luković Golić, Danijela
AU  - Labus, Nebojša
AU  - Paraskevopoulos, Konstantinos M.
AU  - Zorbas, Kostas T.
AU  - Nikolić, Maria Vesna
AU  - Bojičić, Aleksandar I.
AU  - Blagojević, Vladimir D.
AU  - König, Wolfgang
PY  - 2008
UR  - https://dais.sanu.ac.rs/123456789/3567
AB  - Far infrared reflectivity spectra of single crystal Pb 0.85Sn0.15Te doped with Ni were measured in the temperature range between 10 K and 300 K. Analysis of the experimental spectra was made using a fitting procedure based on the modified model of plasmon-phonon interactions and the optical parameters were calculated. Two local modes were observed and their origin was discussed. © Carl Hanser Verlag GmbH & Co. KG.
PB  - Carl Hanser Verlag
T2  - International Journal of Materials Research
T1  - Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni
SP  - 1393
EP  - 1396
VL  - 99
IS  - 12
DO  - 10.3139/146.101772
UR  - https://hdl.handle.net/21.15107/rcub_dais_3567
ER  - 

@article{
author = "Nikolić, Pantelija M. and Vujatović, Stevan S. and Luković Golić, Danijela and Labus, Nebojša and Paraskevopoulos, Konstantinos M. and Zorbas, Kostas T. and Nikolić, Maria Vesna and Bojičić, Aleksandar I. and Blagojević, Vladimir D. and König, Wolfgang",
year = "2008",
abstract = "Far infrared reflectivity spectra of single crystal Pb 0.85Sn0.15Te doped with Ni were measured in the temperature range between 10 K and 300 K. Analysis of the experimental spectra was made using a fitting procedure based on the modified model of plasmon-phonon interactions and the optical parameters were calculated. Two local modes were observed and their origin was discussed. © Carl Hanser Verlag GmbH & Co. KG.",
publisher = "Carl Hanser Verlag",
journal = "International Journal of Materials Research",
title = "Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni",
pages = "1393-1396",
volume = "99",
number = "12",
doi = "10.3139/146.101772",
url = "https://hdl.handle.net/21.15107/rcub_dais_3567"
}

Nikolić, P. M., Vujatović, S. S., Luković Golić, D., Labus, N., Paraskevopoulos, K. M., Zorbas, K. T., Nikolić, M. V., Bojičić, A. I., Blagojević, V. D.,& König, W.. (2008). Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni. in International Journal of Materials Research
Carl Hanser Verlag., 99(12), 1393-1396.
https://doi.org/10.3139/146.101772
https://hdl.handle.net/21.15107/rcub_dais_3567

Nikolić PM, Vujatović SS, Luković Golić D, Labus N, Paraskevopoulos KM, Zorbas KT, Nikolić MV, Bojičić AI, Blagojević VD, König W. Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni. in International Journal of Materials Research. 2008;99(12):1393-1396.
doi:10.3139/146.101772
https://hdl.handle.net/21.15107/rcub_dais_3567 .

Nikolić, Pantelija M., Vujatović, Stevan S., Luković Golić, Danijela, Labus, Nebojša, Paraskevopoulos, Konstantinos M., Zorbas, Kostas T., Nikolić, Maria Vesna, Bojičić, Aleksandar I., Blagojević, Vladimir D., König, Wolfgang, "Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni" in International Journal of Materials Research, 99, no. 12 (2008):1393-1396,
https://doi.org/10.3139/146.101772 .,
https://hdl.handle.net/21.15107/rcub_dais_3567 .

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Vujatović, Stevan S.
AU  - Luković Golić, Danijela
AU  - Labus, Nebojša
AU  - Paraskevopoulos, Konstantinos M.
AU  - Zorbas, Kostas T.
AU  - Nikolić, Maria Vesna
AU  - Bojičić, Aleksandar I.
AU  - Blagojević, Vladimir D.
AU  - König, Wolfgang
PY  - 2008
UR  - https://dais.sanu.ac.rs/123456789/3560
AB  - Far infrared reflectivity spectra of single crystal Pb0.85Sn0.15Te doped with Ni were measured in the temperature range between 10 K and 300 K. Analysis of the experimental spectra was made using a fitting procedure based on the modified model of plasmon-phonon interactions and the optical parameters were calculated. Two local modes were observed and their origin was discussed.
PB  - Carl Hanser Verlag
T2  - Zeitschrift fuer Metallkunde / Materials Research and Advanced Techniques
T1  - Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni
SP  - 1393
EP  - 1396
VL  - 99
IS  - 12
DO  - 10.3139/146.101772
UR  - https://hdl.handle.net/21.15107/rcub_dais_3560
ER  - 

@article{
author = "Nikolić, Pantelija M. and Vujatović, Stevan S. and Luković Golić, Danijela and Labus, Nebojša and Paraskevopoulos, Konstantinos M. and Zorbas, Kostas T. and Nikolić, Maria Vesna and Bojičić, Aleksandar I. and Blagojević, Vladimir D. and König, Wolfgang",
year = "2008",
abstract = "Far infrared reflectivity spectra of single crystal Pb0.85Sn0.15Te doped with Ni were measured in the temperature range between 10 K and 300 K. Analysis of the experimental spectra was made using a fitting procedure based on the modified model of plasmon-phonon interactions and the optical parameters were calculated. Two local modes were observed and their origin was discussed.",
publisher = "Carl Hanser Verlag",
journal = "Zeitschrift fuer Metallkunde / Materials Research and Advanced Techniques",
title = "Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni",
pages = "1393-1396",
volume = "99",
number = "12",
doi = "10.3139/146.101772",
url = "https://hdl.handle.net/21.15107/rcub_dais_3560"
}

Nikolić, P. M., Vujatović, S. S., Luković Golić, D., Labus, N., Paraskevopoulos, K. M., Zorbas, K. T., Nikolić, M. V., Bojičić, A. I., Blagojević, V. D.,& König, W.. (2008). Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni. in Zeitschrift fuer Metallkunde / Materials Research and Advanced Techniques
Carl Hanser Verlag., 99(12), 1393-1396.
https://doi.org/10.3139/146.101772
https://hdl.handle.net/21.15107/rcub_dais_3560

Nikolić PM, Vujatović SS, Luković Golić D, Labus N, Paraskevopoulos KM, Zorbas KT, Nikolić MV, Bojičić AI, Blagojević VD, König W. Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni. in Zeitschrift fuer Metallkunde / Materials Research and Advanced Techniques. 2008;99(12):1393-1396.
doi:10.3139/146.101772
https://hdl.handle.net/21.15107/rcub_dais_3560 .

Nikolić, Pantelija M., Vujatović, Stevan S., Luković Golić, Danijela, Labus, Nebojša, Paraskevopoulos, Konstantinos M., Zorbas, Kostas T., Nikolić, Maria Vesna, Bojičić, Aleksandar I., Blagojević, Vladimir D., König, Wolfgang, "Far infrared spectroscopy of Pb0.85Sn0.15Te alloy doped with Ni" in Zeitschrift fuer Metallkunde / Materials Research and Advanced Techniques, 99, no. 12 (2008):1393-1396,
https://doi.org/10.3139/146.101772 .,
https://hdl.handle.net/21.15107/rcub_dais_3560 .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Smiljanić, M.
AU  - Petrović, R.
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://dais.sanu.ac.rs/123456789/3868
AB  - The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE.
PB  - IEEE
C3  - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - The Schottky barrier contribution to photoacoustic effect in Au-Si system
SP  - 189
EP  - 192
VL  - 1
DO  - 10.1109/ICMEL.2000.840552
UR  - https://hdl.handle.net/21.15107/rcub_dais_3868
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Smiljanić, M. and Petrović, R. and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE.",
publisher = "IEEE",
journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "The Schottky barrier contribution to photoacoustic effect in Au-Si system",
pages = "189-192",
volume = "1",
doi = "10.1109/ICMEL.2000.840552",
url = "https://hdl.handle.net/21.15107/rcub_dais_3868"
}

Todorović, D. M., Nikolić, P. M., Smiljanić, M., Petrović, R., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2000). The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE., 1, 189-192.
https://doi.org/10.1109/ICMEL.2000.840552
https://hdl.handle.net/21.15107/rcub_dais_3868

Todorović DM, Nikolić PM, Smiljanić M, Petrović R, Bojičić AI, Vasiljević Radović D, Radulović K. The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:189-192.
doi:10.1109/ICMEL.2000.840552
https://hdl.handle.net/21.15107/rcub_dais_3868 .

Todorović, D. M., Nikolić, Pantelija M., Smiljanić, M., Petrović, R., Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "The Schottky barrier contribution to photoacoustic effect in Au-Si system" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):189-192,
https://doi.org/10.1109/ICMEL.2000.840552 .,
https://hdl.handle.net/21.15107/rcub_dais_3868 .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Elazar, J.
AU  - Smiljanić, M.
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://dais.sanu.ac.rs/123456789/3869
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.
PB  - IEEE
C3  - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Investigation of ion-beam modified silicon by photoacoustic method
SP  - 247
EP  - 250
VL  - 1
DO  - 10.1109/ICMEL.2000.840566
UR  - https://hdl.handle.net/21.15107/rcub_dais_3869
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Elazar, J. and Smiljanić, M. and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.",
publisher = "IEEE",
journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
pages = "247-250",
volume = "1",
doi = "10.1109/ICMEL.2000.840566",
url = "https://hdl.handle.net/21.15107/rcub_dais_3869"
}

Todorović, D. M., Nikolić, P. M., Elazar, J., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566
https://hdl.handle.net/21.15107/rcub_dais_3869

Todorović DM, Nikolić PM, Elazar J, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250.
doi:10.1109/ICMEL.2000.840566
https://hdl.handle.net/21.15107/rcub_dais_3869 .

Todorović, D. M., Nikolić, Pantelija M., Elazar, J., Smiljanić, M., Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 .,
https://hdl.handle.net/21.15107/rcub_dais_3869 .