TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Bojičić, Aleksandar I.
AU  - Smiljanić, Miloljub
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2003
UR  - https://dais.sanu.ac.rs/123456789/9553
AB  - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Photopyropiezoelectric elastic bending method
SP  - 635
EP  - 638
VL  - 74
IS  - 1
DO  - 10.1063/1.1520317
UR  - https://hdl.handle.net/21.15107/rcub_dais_9553
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Bojičić, Aleksandar I. and Smiljanić, Miloljub and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2003",
abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Photopyropiezoelectric elastic bending method",
pages = "635-638",
volume = "74",
number = "1",
doi = "10.1063/1.1520317",
url = "https://hdl.handle.net/21.15107/rcub_dais_9553"
}

Todorović, D. M., Nikolić, P. M., Bojičić, A. I., Smiljanić, M., Vasiljević Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments
AIP Publishing., 74(1), 635-638.
https://doi.org/10.1063/1.1520317
https://hdl.handle.net/21.15107/rcub_dais_9553

Todorović DM, Nikolić PM, Bojičić AI, Smiljanić M, Vasiljević Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638.
doi:10.1063/1.1520317
https://hdl.handle.net/21.15107/rcub_dais_9553 .

Todorović, D. M., Nikolić, Pantelija M., Bojičić, Aleksandar I., Smiljanić, Miloljub, Vasiljević Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638,
https://doi.org/10.1063/1.1520317 .,
https://hdl.handle.net/21.15107/rcub_dais_9553 .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Smiljanić, Miloljub
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2002
UR  - https://dais.sanu.ac.rs/123456789/9552
AB  - The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure
SP  - 231
EP  - 234
VL  - 1
DO  - 10.1109/MIEL.2002.1003182
UR  - https://hdl.handle.net/21.15107/rcub_dais_9552
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Smiljanić, Miloljub and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2002",
abstract = "The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure",
pages = "231-234",
volume = "1",
doi = "10.1109/MIEL.2002.1003182",
url = "https://hdl.handle.net/21.15107/rcub_dais_9552"
}

Todorović, D. M., Nikolić, P. M., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2002). Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 231-234.
https://doi.org/10.1109/MIEL.2002.1003182
https://hdl.handle.net/21.15107/rcub_dais_9552

Todorović DM, Nikolić PM, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:231-234.
doi:10.1109/MIEL.2002.1003182
https://hdl.handle.net/21.15107/rcub_dais_9552 .

Todorović, D. M., Nikolić, Pantelija M., Smiljanić, Miloljub, Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):231-234,
https://doi.org/10.1109/MIEL.2002.1003182 .,
https://hdl.handle.net/21.15107/rcub_dais_9552 .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Smiljanić, M.
AU  - Petrović, R.
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://dais.sanu.ac.rs/123456789/3868
AB  - The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE.
PB  - IEEE
C3  - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - The Schottky barrier contribution to photoacoustic effect in Au-Si system
SP  - 189
EP  - 192
VL  - 1
DO  - 10.1109/ICMEL.2000.840552
UR  - https://hdl.handle.net/21.15107/rcub_dais_3868
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Smiljanić, M. and Petrović, R. and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE.",
publisher = "IEEE",
journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "The Schottky barrier contribution to photoacoustic effect in Au-Si system",
pages = "189-192",
volume = "1",
doi = "10.1109/ICMEL.2000.840552",
url = "https://hdl.handle.net/21.15107/rcub_dais_3868"
}

Todorović, D. M., Nikolić, P. M., Smiljanić, M., Petrović, R., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2000). The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE., 1, 189-192.
https://doi.org/10.1109/ICMEL.2000.840552
https://hdl.handle.net/21.15107/rcub_dais_3868

Todorović DM, Nikolić PM, Smiljanić M, Petrović R, Bojičić AI, Vasiljević Radović D, Radulović K. The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:189-192.
doi:10.1109/ICMEL.2000.840552
https://hdl.handle.net/21.15107/rcub_dais_3868 .

Todorović, D. M., Nikolić, Pantelija M., Smiljanić, M., Petrović, R., Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "The Schottky barrier contribution to photoacoustic effect in Au-Si system" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):189-192,
https://doi.org/10.1109/ICMEL.2000.840552 .,
https://hdl.handle.net/21.15107/rcub_dais_3868 .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Elazar, J.
AU  - Smiljanić, M.
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://dais.sanu.ac.rs/123456789/3869
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.
PB  - IEEE
C3  - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Investigation of ion-beam modified silicon by photoacoustic method
SP  - 247
EP  - 250
VL  - 1
DO  - 10.1109/ICMEL.2000.840566
UR  - https://hdl.handle.net/21.15107/rcub_dais_3869
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Elazar, J. and Smiljanić, M. and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.",
publisher = "IEEE",
journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
pages = "247-250",
volume = "1",
doi = "10.1109/ICMEL.2000.840566",
url = "https://hdl.handle.net/21.15107/rcub_dais_3869"
}

Todorović, D. M., Nikolić, P. M., Elazar, J., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566
https://hdl.handle.net/21.15107/rcub_dais_3869

Todorović DM, Nikolić PM, Elazar J, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250.
doi:10.1109/ICMEL.2000.840566
https://hdl.handle.net/21.15107/rcub_dais_3869 .

Todorović, D. M., Nikolić, Pantelija M., Elazar, J., Smiljanić, M., Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 .,
https://hdl.handle.net/21.15107/rcub_dais_3869 .

TY  - JOUR
AU  - Dramićanin, Miroslav
AU  - Ristovski, Z.
AU  - Nikolić, Pantelija M.
AU  - Vasiljević, Dana
AU  - Todorović, Dragan M.
PY  - 1995
UR  - https://dais.sanu.ac.rs/123456789/569
AB  - Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
PB  - The American Physical Society
T2  - Physical Review B
T1  - Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
SP  - 14226
EP  - 14232
DO  - 10.1103/PhysRevB.51.14226
UR  - https://hdl.handle.net/21.15107/rcub_dais_569
ER  - 

@article{
author = "Dramićanin, Miroslav and Ristovski, Z. and Nikolić, Pantelija M. and Vasiljević, Dana and Todorović, Dragan M.",
year = "1995",
abstract = "Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.",
publisher = "The American Physical Society",
journal = "Physical Review B",
title = "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal",
pages = "14226-14232",
doi = "10.1103/PhysRevB.51.14226",
url = "https://hdl.handle.net/21.15107/rcub_dais_569"
}

Dramićanin, M., Ristovski, Z., Nikolić, P. M., Vasiljević, D.,& Todorović, D. M.. (1995). Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B
The American Physical Society., 14226-14232.
https://doi.org/10.1103/PhysRevB.51.14226
https://hdl.handle.net/21.15107/rcub_dais_569

Dramićanin M, Ristovski Z, Nikolić PM, Vasiljević D, Todorović DM. Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B. 1995;:14226-14232.
doi:10.1103/PhysRevB.51.14226
https://hdl.handle.net/21.15107/rcub_dais_569 .

Dramićanin, Miroslav, Ristovski, Z., Nikolić, Pantelija M., Vasiljević, Dana, Todorović, Dragan M., "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal" in Physical Review B (1995):14226-14232,
https://doi.org/10.1103/PhysRevB.51.14226 .,
https://hdl.handle.net/21.15107/rcub_dais_569 .