TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Bojičić, Aleksandar I.
AU  - Smiljanić, Miloljub
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2003
UR  - https://dais.sanu.ac.rs/123456789/9553
AB  - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Photopyropiezoelectric elastic bending method
SP  - 635
EP  - 638
VL  - 74
IS  - 1
DO  - 10.1063/1.1520317
UR  - https://hdl.handle.net/21.15107/rcub_dais_9553
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Bojičić, Aleksandar I. and Smiljanić, Miloljub and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2003",
abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Photopyropiezoelectric elastic bending method",
pages = "635-638",
volume = "74",
number = "1",
doi = "10.1063/1.1520317",
url = "https://hdl.handle.net/21.15107/rcub_dais_9553"
}

Todorović, D. M., Nikolić, P. M., Bojičić, A. I., Smiljanić, M., Vasiljević Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments
AIP Publishing., 74(1), 635-638.
https://doi.org/10.1063/1.1520317
https://hdl.handle.net/21.15107/rcub_dais_9553

Todorović DM, Nikolić PM, Bojičić AI, Smiljanić M, Vasiljević Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638.
doi:10.1063/1.1520317
https://hdl.handle.net/21.15107/rcub_dais_9553 .

Todorović, D. M., Nikolić, Pantelija M., Bojičić, Aleksandar I., Smiljanić, Miloljub, Vasiljević Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638,
https://doi.org/10.1063/1.1520317 .,
https://hdl.handle.net/21.15107/rcub_dais_9553 .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Smiljanić, Miloljub
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2002
UR  - https://dais.sanu.ac.rs/123456789/9552
AB  - The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure
SP  - 231
EP  - 234
VL  - 1
DO  - 10.1109/MIEL.2002.1003182
UR  - https://hdl.handle.net/21.15107/rcub_dais_9552
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Smiljanić, Miloljub and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2002",
abstract = "The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure",
pages = "231-234",
volume = "1",
doi = "10.1109/MIEL.2002.1003182",
url = "https://hdl.handle.net/21.15107/rcub_dais_9552"
}

Todorović, D. M., Nikolić, P. M., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2002). Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 231-234.
https://doi.org/10.1109/MIEL.2002.1003182
https://hdl.handle.net/21.15107/rcub_dais_9552

Todorović DM, Nikolić PM, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:231-234.
doi:10.1109/MIEL.2002.1003182
https://hdl.handle.net/21.15107/rcub_dais_9552 .

Todorović, D. M., Nikolić, Pantelija M., Smiljanić, Miloljub, Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):231-234,
https://doi.org/10.1109/MIEL.2002.1003182 .,
https://hdl.handle.net/21.15107/rcub_dais_9552 .