Cvetković, Olga

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orcid::0000-0002-1261-833X
  • Cvetković, Olga (4)
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Author's Bibliography

Far infrared study of local impurity modes of Boron-doped PbTe

Nikolić, Pantelija M.; Paraskevopoulos, Konstantinos M.; Zachariadis, G.; Valasiadis, O.; Zorba, Triantafyllia T.; Vujatović, Stevan S.; Nikolić, N.; Aleksić, Obrad S.; Ivetić, Tamara; Cvetković, Olga; Blagojević, Vladimir D.; Nikolić, Maria Vesna

(Springer US, 2012)

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Zachariadis, G.
AU  - Valasiadis, O.
AU  - Zorba, Triantafyllia T.
AU  - Vujatović, Stevan S.
AU  - Nikolić, N.
AU  - Aleksić, Obrad S.
AU  - Ivetić, Tamara
AU  - Cvetković, Olga
AU  - Blagojević, Vladimir D.
AU  - Nikolić, Maria Vesna
PY  - 2012
AB  - PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.
PB  - Springer US
T2  - Journal of Materials Science
T1  - Far infrared study of local impurity modes of Boron-doped PbTe
SP  - 2384
EP  - 2389
VL  - 47
VL  - 47
IS  - 5
IS  - 5
DO  - 10.1007/s10853-011-6057-8
UR  - https://hdl.handle.net/21.15107/rcub_dais_483
ER  - 
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Zachariadis, G. and Valasiadis, O. and Zorba, Triantafyllia T. and Vujatović, Stevan S. and Nikolić, N. and Aleksić, Obrad S. and Ivetić, Tamara and Cvetković, Olga and Blagojević, Vladimir D. and Nikolić, Maria Vesna",
year = "2012",
abstract = "PbTe single crystals, doped with B, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and room temperature. The experimental spectra were numerically analyzed, and optical parameters were calculated. Local impurity modes of boron were observed at about 150 and 240 cm−1. For all samples, after FIR measurements, the content of boron was measured using inductively coupled plasma atomic emission spectrometry. Optical mobility of free carriers was calculated and it was the highest for the sample with only 0.014 at.% of boron in PbTe. A negative photoconductivity effect at 130 K for PbTe + B was also observed.",
publisher = "Springer US",
journal = "Journal of Materials Science",
title = "Far infrared study of local impurity modes of Boron-doped PbTe",
pages = "2384-2389",
volume = "47, 47",
number = "5, 5",
doi = "10.1007/s10853-011-6057-8",
url = "https://hdl.handle.net/21.15107/rcub_dais_483"
}
Nikolić, P. M., Paraskevopoulos, K. M., Zachariadis, G., Valasiadis, O., Zorba, T. T., Vujatović, S. S., Nikolić, N., Aleksić, O. S., Ivetić, T., Cvetković, O., Blagojević, V. D.,& Nikolić, M. V. (2012). Far infrared study of local impurity modes of Boron-doped PbTe.
Journal of Materials Science
Springer US., 47(5), 2384-2389.
https://doi.org/10.1007/s10853-011-6057-8
Nikolić PM, Paraskevopoulos KM, Zachariadis G, Valasiadis O, Zorba TT, Vujatović SS, Nikolić N, Aleksić OS, Ivetić T, Cvetković O, Blagojević VD, Nikolić MV. Far infrared study of local impurity modes of Boron-doped PbTe. Journal of Materials Science. 2012;47(5):2384-2389.
doi:10.1007/s10853-011-6057-8.
Nikolić Pantelija M., Paraskevopoulos Konstantinos M., Zachariadis G., Valasiadis O., Zorba Triantafyllia T., Vujatović Stevan S., Nikolić N., Aleksić Obrad S., Ivetić Tamara, Cvetković Olga, Blagojević Vladimir D., Nikolić Maria Vesna, "Far infrared study of local impurity modes of Boron-doped PbTe" Journal of Materials Science, 47, no. 5 (2012):2384-2389,
https://doi.org/10.1007/s10853-011-6057-8 .
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Temperature dependence of In1−xGaxSb reflectivity in the far infrared

Nikolić, Pantelija M.; Paraskevopoulos, Konstantinos M.; Pavlidou, Eleni; Zorba, Triantafyllia T.; Ivetić, Tamara; Vujatović, Stevan S.; Aleksić, Obrad S.; Nikolić, N.; Cvetković, Olga; Blagojević, Vladimir D.; Nikolić, Maria Vesna

(2011)

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, Eleni
AU  - Zorba, Triantafyllia T.
AU  - Ivetić, Tamara
AU  - Vujatović, Stevan S.
AU  - Aleksić, Obrad S.
AU  - Nikolić, N.
AU  - Cvetković, Olga
AU  - Blagojević, Vladimir D.
AU  - Nikolić, Maria Vesna
PY  - 2011
AB  - Far infrared reflectivity spectra of polycrystalline In1−xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures
T2  - Materials Chemistry and Physics
T1  - Temperature dependence of In1−xGaxSb reflectivity in the far infrared
SP  - 72
EP  - 76
DO  - 10.1016/j.matchemphys.2010.08.073
UR  - https://hdl.handle.net/21.15107/rcub_dais_734
ER  - 
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Pavlidou, Eleni and Zorba, Triantafyllia T. and Ivetić, Tamara and Vujatović, Stevan S. and Aleksić, Obrad S. and Nikolić, N. and Cvetković, Olga and Blagojević, Vladimir D. and Nikolić, Maria Vesna",
year = "2011",
abstract = "Far infrared reflectivity spectra of polycrystalline In1−xGaxSb were measured and numerically analyzed using the classical dispersion formula and also a fitting procedure based on the modified plasmon-phonon interaction model in the temperature range from 10 K to 300 K. Optical parameters were calculated and discussed. A local mode belonging to the GaSb rich end and two-mode behavior were observed at low temperatures",
journal = "Materials Chemistry and Physics",
title = "Temperature dependence of In1−xGaxSb reflectivity in the far infrared",
pages = "72-76",
doi = "10.1016/j.matchemphys.2010.08.073",
url = "https://hdl.handle.net/21.15107/rcub_dais_734"
}
Nikolić, P. M., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetić, T., Vujatović, S. S., Aleksić, O. S., Nikolić, N., Cvetković, O., Blagojević, V. D.,& Nikolić, M. V. (2011). Temperature dependence of In1−xGaxSb reflectivity in the far infrared.
Materials Chemistry and Physics, 72-76.
https://doi.org/10.1016/j.matchemphys.2010.08.073
Nikolić PM, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetić T, Vujatović SS, Aleksić OS, Nikolić N, Cvetković O, Blagojević VD, Nikolić MV. Temperature dependence of In1−xGaxSb reflectivity in the far infrared. Materials Chemistry and Physics. 2011;:72-76.
doi:10.1016/j.matchemphys.2010.08.073.
Nikolić Pantelija M., Paraskevopoulos Konstantinos M., Pavlidou Eleni, Zorba Triantafyllia T., Ivetić Tamara, Vujatović Stevan S., Aleksić Obrad S., Nikolić N., Cvetković Olga, Blagojević Vladimir D., Nikolić Maria Vesna, "Temperature dependence of In1−xGaxSb reflectivity in the far infrared" Materials Chemistry and Physics (2011):72-76,
https://doi.org/10.1016/j.matchemphys.2010.08.073 .
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Far infrared properties of PbTe doped with Hg

Nikolić, Pantelija M.; Vujatović, Stevan S.; Paraskevopoulos, Konstantinos M.; Pavlidou, Eleni; Zorba, Triantafyllia T.; Ivetić, Tamara; Cvetković, Olga; Aleksić, Obrad S.; Blagojević, Vladimir D.; Nikolić, Maria Vesna

(Bucharest: Integra Natura Omnia et Aeterna, 2010)

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Vujatović, Stevan S.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Pavlidou, Eleni
AU  - Zorba, Triantafyllia T.
AU  - Ivetić, Tamara
AU  - Cvetković, Olga
AU  - Aleksić, Obrad S.
AU  - Blagojević, Vladimir D.
AU  - Nikolić, Maria Vesna
PY  - 2010
AB  - Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
PB  - Bucharest: Integra Natura Omnia et Aeterna
T2  - Optoelectronics and Advanced Materials, Rapid Communications
T1  - Far infrared properties of PbTe doped with Hg
SP  - 151
EP  - 153
VL  - 4
IS  - 2
UR  - https://hdl.handle.net/21.15107/rcub_dais_3433
ER  - 
@article{
author = "Nikolić, Pantelija M. and Vujatović, Stevan S. and Paraskevopoulos, Konstantinos M. and Pavlidou, Eleni and Zorba, Triantafyllia T. and Ivetić, Tamara and Cvetković, Olga and Aleksić, Obrad S. and Blagojević, Vladimir D. and Nikolić, Maria Vesna",
year = "2010",
abstract = "Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.",
publisher = "Bucharest: Integra Natura Omnia et Aeterna",
journal = "Optoelectronics and Advanced Materials, Rapid Communications",
title = "Far infrared properties of PbTe doped with Hg",
pages = "151-153",
volume = "4",
number = "2",
url = "https://hdl.handle.net/21.15107/rcub_dais_3433"
}
Nikolić, P. M., Vujatović, S. S., Paraskevopoulos, K. M., Pavlidou, E., Zorba, T. T., Ivetić, T., Cvetković, O., Aleksić, O. S., Blagojević, V. D.,& Nikolić, M. V. (2010). Far infrared properties of PbTe doped with Hg.
Optoelectronics and Advanced Materials, Rapid Communications
Bucharest: Integra Natura Omnia et Aeterna., 4(2), 151-153.
Nikolić PM, Vujatović SS, Paraskevopoulos KM, Pavlidou E, Zorba TT, Ivetić T, Cvetković O, Aleksić OS, Blagojević VD, Nikolić MV. Far infrared properties of PbTe doped with Hg. Optoelectronics and Advanced Materials, Rapid Communications. 2010;4(2):151-153.
Nikolić Pantelija M., Vujatović Stevan S., Paraskevopoulos Konstantinos M., Pavlidou Eleni, Zorba Triantafyllia T., Ivetić Tamara, Cvetković Olga, Aleksić Obrad S., Blagojević Vladimir D., Nikolić Maria Vesna, "Far infrared properties of PbTe doped with Hg" Optoelectronics and Advanced Materials, Rapid Communications, 4, no. 2 (2010):151-153
1

Thermal diffusivity of single crystal Bi0.9Sb0.1

Nikolić, Pantelija M.; Vujatović, Stevan S.; Ivetić, Tamara; Nikolić, Maria Vesna; Cvetković, Olga; Aleksić, Obrad S.; Blagojević, Vladimir D.; Branković, Goran; Nikolić, Nataša

(Belgrade : International Institute for the Science of Sintering, 2010)

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Vujatović, Stevan S.
AU  - Ivetić, Tamara
AU  - Nikolić, Maria Vesna
AU  - Cvetković, Olga
AU  - Aleksić, Obrad S.
AU  - Blagojević, Vladimir D.
AU  - Branković, Goran
AU  - Nikolić, Nataša
PY  - 2010
AB  - A single crystal Bi0.9Sb0.1 ingot was synthesized using the Bridgman technique. Thermal diffusivity and electronic transport properties of single crystal cleaved plates (00l) were determined from PA photoacoustic phase and amplitude spectra obtained using the photoacoustic method with a transmission detection configuration. Both the PA phase and amplitude were measured versus the modulation frequency and numerically analyzed. EDS analyses done to determine chemical composition of the studied samples as well as to check sample homogeneity. Hall effect measurements data were used for the photoacustic measurements.
PB  - Belgrade : International Institute for the Science of Sintering
T2  - Science of Sintering
T1  - Thermal diffusivity of single crystal Bi0.9Sb0.1
SP  - 45
EP  - 50
VL  - 42
IS  - 1
DO  - 10.2298/SOS1001045N
UR  - https://hdl.handle.net/21.15107/rcub_dais_205
ER  - 
@article{
author = "Nikolić, Pantelija M. and Vujatović, Stevan S. and Ivetić, Tamara and Nikolić, Maria Vesna and Cvetković, Olga and Aleksić, Obrad S. and Blagojević, Vladimir D. and Branković, Goran and Nikolić, Nataša",
year = "2010",
abstract = "A single crystal Bi0.9Sb0.1 ingot was synthesized using the Bridgman technique. Thermal diffusivity and electronic transport properties of single crystal cleaved plates (00l) were determined from PA photoacoustic phase and amplitude spectra obtained using the photoacoustic method with a transmission detection configuration. Both the PA phase and amplitude were measured versus the modulation frequency and numerically analyzed. EDS analyses done to determine chemical composition of the studied samples as well as to check sample homogeneity. Hall effect measurements data were used for the photoacustic measurements.",
publisher = "Belgrade : International Institute for the Science of Sintering",
journal = "Science of Sintering",
title = "Thermal diffusivity of single crystal Bi0.9Sb0.1",
pages = "45-50",
volume = "42",
number = "1",
doi = "10.2298/SOS1001045N",
url = "https://hdl.handle.net/21.15107/rcub_dais_205"
}
Nikolić, P. M., Vujatović, S. S., Ivetić, T., Nikolić, M. V., Cvetković, O., Aleksić, O. S., Blagojević, V. D., Branković, G.,& Nikolić, N. (2010). Thermal diffusivity of single crystal Bi0.9Sb0.1.
Science of Sintering
Belgrade : International Institute for the Science of Sintering., 42(1), 45-50.
https://doi.org/10.2298/SOS1001045N
Nikolić PM, Vujatović SS, Ivetić T, Nikolić MV, Cvetković O, Aleksić OS, Blagojević VD, Branković G, Nikolić N. Thermal diffusivity of single crystal Bi0.9Sb0.1. Science of Sintering. 2010;42(1):45-50.
doi:10.2298/SOS1001045N.
Nikolić Pantelija M., Vujatović Stevan S., Ivetić Tamara, Nikolić Maria Vesna, Cvetković Olga, Aleksić Obrad S., Blagojević Vladimir D., Branković Goran, Nikolić Nataša, "Thermal diffusivity of single crystal Bi0.9Sb0.1" Science of Sintering, 42, no. 1 (2010):45-50,
https://doi.org/10.2298/SOS1001045N .
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