Bojičić, Aleksandar I.

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  • Bojičić, Aleksandar I. (8)
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Author's Bibliography

Lead telluride doped with Au as a very promising material for thermoelectric applications

Nikolić, Pantelija M.; Paraskevopoulos, Konstantinos M.; Zorba, Triantafyllia T.; Vasiljević, Zorka Ž.; Pavlidou, Eleni; Vujatović, Stevan S.; Blagojevic, Vladimir; Aleksić, Obrad S.; Bojičić, Aleksandar I.; Nikolić, Maria Vesna

(Hindawi, 2015)

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Zorba, Triantafyllia T.
AU  - Vasiljević, Zorka Ž.
AU  - Pavlidou, Eleni
AU  - Vujatović, Stevan S.
AU  - Blagojevic, Vladimir
AU  - Aleksić, Obrad S.
AU  - Bojičić, Aleksandar I.
AU  - Nikolić, Maria Vesna
PY  - 2015
UR  - https://dais.sanu.ac.rs/123456789/3544
AB  - PbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the "n" type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA) method with the transmission detection configuration. The results obtained with the far infrared and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material. © 2015 Pantelija M. Nikolic et al.
PB  - Hindawi
T2  - Advances in Materials Science and Engineering
T1  - Lead telluride doped with Au as a very promising material for thermoelectric applications
SP  - 283782
VL  - 2015
DO  - 10.1155/2015/283782
UR  - https://hdl.handle.net/21.15107/rcub_dais_3544
ER  - 
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Zorba, Triantafyllia T. and Vasiljević, Zorka Ž. and Pavlidou, Eleni and Vujatović, Stevan S. and Blagojevic, Vladimir and Aleksić, Obrad S. and Bojičić, Aleksandar I. and Nikolić, Maria Vesna",
year = "2015",
abstract = "PbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the "n" type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA) method with the transmission detection configuration. The results obtained with the far infrared and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material. © 2015 Pantelija M. Nikolic et al.",
publisher = "Hindawi",
journal = "Advances in Materials Science and Engineering",
title = "Lead telluride doped with Au as a very promising material for thermoelectric applications",
pages = "283782",
volume = "2015",
doi = "10.1155/2015/283782",
url = "https://hdl.handle.net/21.15107/rcub_dais_3544"
}
Nikolić, P. M., Paraskevopoulos, K. M., Zorba, T. T., Vasiljević, Z. Ž., Pavlidou, E., Vujatović, S. S., Blagojevic, V., Aleksić, O. S., Bojičić, A. I.,& Nikolić, M. V.. (2015). Lead telluride doped with Au as a very promising material for thermoelectric applications. in Advances in Materials Science and Engineering
Hindawi., 2015, 283782.
https://doi.org/10.1155/2015/283782
https://hdl.handle.net/21.15107/rcub_dais_3544
Nikolić PM, Paraskevopoulos KM, Zorba TT, Vasiljević ZŽ, Pavlidou E, Vujatović SS, Blagojevic V, Aleksić OS, Bojičić AI, Nikolić MV. Lead telluride doped with Au as a very promising material for thermoelectric applications. in Advances in Materials Science and Engineering. 2015;2015:283782.
doi:10.1155/2015/283782
https://hdl.handle.net/21.15107/rcub_dais_3544 .
Nikolić, Pantelija M., Paraskevopoulos, Konstantinos M., Zorba, Triantafyllia T., Vasiljević, Zorka Ž., Pavlidou, Eleni, Vujatović, Stevan S., Blagojevic, Vladimir, Aleksić, Obrad S., Bojičić, Aleksandar I., Nikolić, Maria Vesna, "Lead telluride doped with Au as a very promising material for thermoelectric applications" in Advances in Materials Science and Engineering, 2015 (2015):283782,
https://doi.org/10.1155/2015/283782 .,
https://hdl.handle.net/21.15107/rcub_dais_3544 .

Optical properties of PbTe doped with Nd

Nikolić, Maria Vesna; Paraskevopoulos, Konstantinos M.; Ivetić, Tamara; Zorba, Triantafyllia T.; Vujatović, Stevan S.; Pavlidou, Eleni; Blagojević, Vladimir D.; Bojičić, Aleksandar I.; Aleksić, Obrad S.; Nikolić, N.; König, Wolfgang; Nikolić, Pantelija M.

(Springer US, 2010)

TY  - JOUR
AU  - Nikolić, Maria Vesna
AU  - Paraskevopoulos, Konstantinos M.
AU  - Ivetić, Tamara
AU  - Zorba, Triantafyllia T.
AU  - Vujatović, Stevan S.
AU  - Pavlidou, Eleni
AU  - Blagojević, Vladimir D.
AU  - Bojičić, Aleksandar I.
AU  - Aleksić, Obrad S.
AU  - Nikolić, N.
AU  - König, Wolfgang
AU  - Nikolić, Pantelija M.
PY  - 2010
UR  - https://dais.sanu.ac.rs/123456789/3413
AB  - Single crystals of lead telluride doped with Nd were synthesized using the Bridgeman method. Room temperature far infrared reflectivity spectra were measured for PbTe samples with Nd content in the range 0.2-0.9 at.%. Optical reflectivity in the far infrared range was measured in the temperature range between 10 and 300 K for a highly polished PbTe sample with 0.6 at.% Nd. The experimental diagrams were numerically analyzed with a fitting procedure using a modified plasmon-phonon model. Two local modes were noted and their origin was discussed. Optical electron mobility was calculated for all analyzed samples.
PB  - Springer US
T2  - Journal of Materials Science
T2  - Journal of Materials Science
T1  - Optical properties of PbTe doped with Nd
SP  - 5910
EP  - 5914
VL  - 45
IS  - 21
DO  - 10.1007/s10853-010-4670-6
UR  - https://hdl.handle.net/21.15107/rcub_dais_3413
ER  - 
@article{
author = "Nikolić, Maria Vesna and Paraskevopoulos, Konstantinos M. and Ivetić, Tamara and Zorba, Triantafyllia T. and Vujatović, Stevan S. and Pavlidou, Eleni and Blagojević, Vladimir D. and Bojičić, Aleksandar I. and Aleksić, Obrad S. and Nikolić, N. and König, Wolfgang and Nikolić, Pantelija M.",
year = "2010",
abstract = "Single crystals of lead telluride doped with Nd were synthesized using the Bridgeman method. Room temperature far infrared reflectivity spectra were measured for PbTe samples with Nd content in the range 0.2-0.9 at.%. Optical reflectivity in the far infrared range was measured in the temperature range between 10 and 300 K for a highly polished PbTe sample with 0.6 at.% Nd. The experimental diagrams were numerically analyzed with a fitting procedure using a modified plasmon-phonon model. Two local modes were noted and their origin was discussed. Optical electron mobility was calculated for all analyzed samples.",
publisher = "Springer US",
journal = "Journal of Materials Science, Journal of Materials Science",
title = "Optical properties of PbTe doped with Nd",
pages = "5910-5914",
volume = "45",
number = "21",
doi = "10.1007/s10853-010-4670-6",
url = "https://hdl.handle.net/21.15107/rcub_dais_3413"
}
Nikolić, M. V., Paraskevopoulos, K. M., Ivetić, T., Zorba, T. T., Vujatović, S. S., Pavlidou, E., Blagojević, V. D., Bojičić, A. I., Aleksić, O. S., Nikolić, N., König, W.,& Nikolić, P. M.. (2010). Optical properties of PbTe doped with Nd. in Journal of Materials Science
Springer US., 45(21), 5910-5914.
https://doi.org/10.1007/s10853-010-4670-6
https://hdl.handle.net/21.15107/rcub_dais_3413
Nikolić MV, Paraskevopoulos KM, Ivetić T, Zorba TT, Vujatović SS, Pavlidou E, Blagojević VD, Bojičić AI, Aleksić OS, Nikolić N, König W, Nikolić PM. Optical properties of PbTe doped with Nd. in Journal of Materials Science. 2010;45(21):5910-5914.
doi:10.1007/s10853-010-4670-6
https://hdl.handle.net/21.15107/rcub_dais_3413 .
Nikolić, Maria Vesna, Paraskevopoulos, Konstantinos M., Ivetić, Tamara, Zorba, Triantafyllia T., Vujatović, Stevan S., Pavlidou, Eleni, Blagojević, Vladimir D., Bojičić, Aleksandar I., Aleksić, Obrad S., Nikolić, N., König, Wolfgang, Nikolić, Pantelija M., "Optical properties of PbTe doped with Nd" in Journal of Materials Science, 45, no. 21 (2010):5910-5914,
https://doi.org/10.1007/s10853-010-4670-6 .,
https://hdl.handle.net/21.15107/rcub_dais_3413 .
6
6
6

Far infrared study of impurity local modes in Pr doped PbTe

Nikolić, Pantelija M.; Paraskevopoulos, Konstantinos M.; Nikolić, Maria Vesna; Vujatović, Stevan S.; Zorba, Triantafyllia T.; Chatzistavrou, Xanthippi; Stamenović, Bojana; Luković Golić, Danijela; Blagojević, Vladimir D.; Bojičić, Aleksandar I.

(Elsevier, 2009)

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Nikolić, Maria Vesna
AU  - Vujatović, Stevan S.
AU  - Zorba, Triantafyllia T.
AU  - Chatzistavrou, Xanthippi
AU  - Stamenović, Bojana
AU  - Luković Golić, Danijela
AU  - Blagojević, Vladimir D.
AU  - Bojičić, Aleksandar I.
PY  - 2009
UR  - https://dais.sanu.ac.rs/123456789/3462
AB  - Single crystal samples of lead telluride doped with Pr were produced using the Bridgman method. Far infrared spectra of the samples doped with 0.15 at%, 0.25 at% and 0.6 at% Pr are presented. The experimental data were numerically analyzed using a fitting procedure based on the plasmon-phonon interaction model and optical parameters were determined. Two local modes of praseodium were observed at about 158 cm-1 and 257 cm-1 at room temperature. The origin of the local modes was discussed. © 2008 Elsevier B.V. All rights reserved.
PB  - Elsevier
T2  - Materials Chemistry and Physics
T1  - Far infrared study of impurity local modes in Pr doped PbTe
SP  - 185
EP  - 187
VL  - 114
IS  - 1
DO  - 10.1016/j.matchemphys.2008.09.006
UR  - https://hdl.handle.net/21.15107/rcub_dais_3462
ER  - 
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Nikolić, Maria Vesna and Vujatović, Stevan S. and Zorba, Triantafyllia T. and Chatzistavrou, Xanthippi and Stamenović, Bojana and Luković Golić, Danijela and Blagojević, Vladimir D. and Bojičić, Aleksandar I.",
year = "2009",
abstract = "Single crystal samples of lead telluride doped with Pr were produced using the Bridgman method. Far infrared spectra of the samples doped with 0.15 at%, 0.25 at% and 0.6 at% Pr are presented. The experimental data were numerically analyzed using a fitting procedure based on the plasmon-phonon interaction model and optical parameters were determined. Two local modes of praseodium were observed at about 158 cm-1 and 257 cm-1 at room temperature. The origin of the local modes was discussed. © 2008 Elsevier B.V. All rights reserved.",
publisher = "Elsevier",
journal = "Materials Chemistry and Physics",
title = "Far infrared study of impurity local modes in Pr doped PbTe",
pages = "185-187",
volume = "114",
number = "1",
doi = "10.1016/j.matchemphys.2008.09.006",
url = "https://hdl.handle.net/21.15107/rcub_dais_3462"
}
Nikolić, P. M., Paraskevopoulos, K. M., Nikolić, M. V., Vujatović, S. S., Zorba, T. T., Chatzistavrou, X., Stamenović, B., Luković Golić, D., Blagojević, V. D.,& Bojičić, A. I.. (2009). Far infrared study of impurity local modes in Pr doped PbTe. in Materials Chemistry and Physics
Elsevier., 114(1), 185-187.
https://doi.org/10.1016/j.matchemphys.2008.09.006
https://hdl.handle.net/21.15107/rcub_dais_3462
Nikolić PM, Paraskevopoulos KM, Nikolić MV, Vujatović SS, Zorba TT, Chatzistavrou X, Stamenović B, Luković Golić D, Blagojević VD, Bojičić AI. Far infrared study of impurity local modes in Pr doped PbTe. in Materials Chemistry and Physics. 2009;114(1):185-187.
doi:10.1016/j.matchemphys.2008.09.006
https://hdl.handle.net/21.15107/rcub_dais_3462 .
Nikolić, Pantelija M., Paraskevopoulos, Konstantinos M., Nikolić, Maria Vesna, Vujatović, Stevan S., Zorba, Triantafyllia T., Chatzistavrou, Xanthippi, Stamenović, Bojana, Luković Golić, Danijela, Blagojević, Vladimir D., Bojičić, Aleksandar I., "Far infrared study of impurity local modes in Pr doped PbTe" in Materials Chemistry and Physics, 114, no. 1 (2009):185-187,
https://doi.org/10.1016/j.matchemphys.2008.09.006 .,
https://hdl.handle.net/21.15107/rcub_dais_3462 .

Far infrared study of impurity local modes in palladium-doped PbTe and PbSnTe

Nikolić, Pantelija M.; Paraskevopoulos, Konstantinos M.; Kim, S. R.; Vujatović, Stevan S.; Labus, Nebojša; Zorba, Triantafyllia T.; Jović, Maja; Nikolić, Maria Vesna; Bojičić, Aleksandar I.; Blagojević, Vladimir D.; Stamenović, Bojana; König, Wolfgang

(Elsevier, 2009)

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Kim, S. R.
AU  - Vujatović, Stevan S.
AU  - Labus, Nebojša
AU  - Zorba, Triantafyllia T.
AU  - Jović, Maja
AU  - Nikolić, Maria Vesna
AU  - Bojičić, Aleksandar I.
AU  - Blagojević, Vladimir D.
AU  - Stamenović, Bojana
AU  - König, Wolfgang
PY  - 2009
UR  - https://dais.sanu.ac.rs/123456789/3464
AB  - PbTe and Pb0.85Sn0.15Te single crystals, doped with Pd, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and 300 K. The experimental spectra were numerically analyzed using first the Kramers-Krönig method and then a fitting procedure, based on the plasmon-phonon interaction model, and the optical parameters were calculated. Since the electronic structure of the ionized state for Pd, Ni and Pt is of the same type, and the influence of d-shells is very strong, special attention was paid to the influence of the electronic structure of dopants on the final properties PbTe and PbSnTe crystals. © 2008 Elsevier B.V. All rights reserved.
PB  - Elsevier
T2  - Journal of Alloys and Compounds
T1  - Far infrared study of impurity local modes in palladium-doped PbTe and PbSnTe
SP  - 930
EP  - 934
VL  - 475
IS  - 1-2
DO  - 10.1016/j.jallcom.2008.08.069
UR  - https://hdl.handle.net/21.15107/rcub_dais_3464
ER  - 
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Kim, S. R. and Vujatović, Stevan S. and Labus, Nebojša and Zorba, Triantafyllia T. and Jović, Maja and Nikolić, Maria Vesna and Bojičić, Aleksandar I. and Blagojević, Vladimir D. and Stamenović, Bojana and König, Wolfgang",
year = "2009",
abstract = "PbTe and Pb0.85Sn0.15Te single crystals, doped with Pd, were grown using the Bridgman method. Far infrared spectra were measured in the temperature range between 10 K and 300 K. The experimental spectra were numerically analyzed using first the Kramers-Krönig method and then a fitting procedure, based on the plasmon-phonon interaction model, and the optical parameters were calculated. Since the electronic structure of the ionized state for Pd, Ni and Pt is of the same type, and the influence of d-shells is very strong, special attention was paid to the influence of the electronic structure of dopants on the final properties PbTe and PbSnTe crystals. © 2008 Elsevier B.V. All rights reserved.",
publisher = "Elsevier",
journal = "Journal of Alloys and Compounds",
title = "Far infrared study of impurity local modes in palladium-doped PbTe and PbSnTe",
pages = "930-934",
volume = "475",
number = "1-2",
doi = "10.1016/j.jallcom.2008.08.069",
url = "https://hdl.handle.net/21.15107/rcub_dais_3464"
}
Nikolić, P. M., Paraskevopoulos, K. M., Kim, S. R., Vujatović, S. S., Labus, N., Zorba, T. T., Jović, M., Nikolić, M. V., Bojičić, A. I., Blagojević, V. D., Stamenović, B.,& König, W.. (2009). Far infrared study of impurity local modes in palladium-doped PbTe and PbSnTe. in Journal of Alloys and Compounds
Elsevier., 475(1-2), 930-934.
https://doi.org/10.1016/j.jallcom.2008.08.069
https://hdl.handle.net/21.15107/rcub_dais_3464
Nikolić PM, Paraskevopoulos KM, Kim SR, Vujatović SS, Labus N, Zorba TT, Jović M, Nikolić MV, Bojičić AI, Blagojević VD, Stamenović B, König W. Far infrared study of impurity local modes in palladium-doped PbTe and PbSnTe. in Journal of Alloys and Compounds. 2009;475(1-2):930-934.
doi:10.1016/j.jallcom.2008.08.069
https://hdl.handle.net/21.15107/rcub_dais_3464 .
Nikolić, Pantelija M., Paraskevopoulos, Konstantinos M., Kim, S. R., Vujatović, Stevan S., Labus, Nebojša, Zorba, Triantafyllia T., Jović, Maja, Nikolić, Maria Vesna, Bojičić, Aleksandar I., Blagojević, Vladimir D., Stamenović, Bojana, König, Wolfgang, "Far infrared study of impurity local modes in palladium-doped PbTe and PbSnTe" in Journal of Alloys and Compounds, 475, no. 1-2 (2009):930-934,
https://doi.org/10.1016/j.jallcom.2008.08.069 .,
https://hdl.handle.net/21.15107/rcub_dais_3464 .
2
2
2

Optical properties of PbTe and PbSnTe doped with Cr

Nikolić, Pantelija M.; Paraskevopoulos, Konstantinos M.; Vujatović, Stevan S.; Nikolić, Maria Vesna; Chatzistavrou, Xanthippi; Pavlidou, Eleni; Ivetić, Tamara; Blagojević, Vladimir D.; Bojičić, Aleksandar I.; Dinulović, D.

(Elsevier, 2009)

TY  - JOUR
AU  - Nikolić, Pantelija M.
AU  - Paraskevopoulos, Konstantinos M.
AU  - Vujatović, Stevan S.
AU  - Nikolić, Maria Vesna
AU  - Chatzistavrou, Xanthippi
AU  - Pavlidou, Eleni
AU  - Ivetić, Tamara
AU  - Blagojević, Vladimir D.
AU  - Bojičić, Aleksandar I.
AU  - Dinulović, D.
PY  - 2009
UR  - https://dais.sanu.ac.rs/123456789/3466
AB  - Single crystal samples of PbTe and PbSnTe doped with Cr were made using the Bridgman technique. Far infrared diagrams of PbTe samples doped with 0.4 at.%, 0.8 at.% and 1 at.% Cr and also of Pb0.9Sn0.1Te doped with 0.4 at.%, 0.7 at.% and 1.1 at.% Cr are presented and numerically analyzed. Local modes were determined at about 260 cm-1 and 480 cm-1 for PbTe doped with Cr and at slightly higher frequencies for PbSnTe doped with Cr. The origin of the local modes was discused about the possible application of the PbSnTe + Cr alloys. © 2009 Elsevier B.V. All rights reserved.
PB  - Elsevier
T2  - Journal of Alloys and Compounds
T1  - Optical properties of PbTe and PbSnTe doped with Cr
SP  - 893
EP  - 896
VL  - 480
IS  - 2
DO  - 10.1016/j.jallcom.2009.02.067
UR  - https://hdl.handle.net/21.15107/rcub_dais_3466
ER  - 
@article{
author = "Nikolić, Pantelija M. and Paraskevopoulos, Konstantinos M. and Vujatović, Stevan S. and Nikolić, Maria Vesna and Chatzistavrou, Xanthippi and Pavlidou, Eleni and Ivetić, Tamara and Blagojević, Vladimir D. and Bojičić, Aleksandar I. and Dinulović, D.",
year = "2009",
abstract = "Single crystal samples of PbTe and PbSnTe doped with Cr were made using the Bridgman technique. Far infrared diagrams of PbTe samples doped with 0.4 at.%, 0.8 at.% and 1 at.% Cr and also of Pb0.9Sn0.1Te doped with 0.4 at.%, 0.7 at.% and 1.1 at.% Cr are presented and numerically analyzed. Local modes were determined at about 260 cm-1 and 480 cm-1 for PbTe doped with Cr and at slightly higher frequencies for PbSnTe doped with Cr. The origin of the local modes was discused about the possible application of the PbSnTe + Cr alloys. © 2009 Elsevier B.V. All rights reserved.",
publisher = "Elsevier",
journal = "Journal of Alloys and Compounds",
title = "Optical properties of PbTe and PbSnTe doped with Cr",
pages = "893-896",
volume = "480",
number = "2",
doi = "10.1016/j.jallcom.2009.02.067",
url = "https://hdl.handle.net/21.15107/rcub_dais_3466"
}
Nikolić, P. M., Paraskevopoulos, K. M., Vujatović, S. S., Nikolić, M. V., Chatzistavrou, X., Pavlidou, E., Ivetić, T., Blagojević, V. D., Bojičić, A. I.,& Dinulović, D.. (2009). Optical properties of PbTe and PbSnTe doped with Cr. in Journal of Alloys and Compounds
Elsevier., 480(2), 893-896.
https://doi.org/10.1016/j.jallcom.2009.02.067
https://hdl.handle.net/21.15107/rcub_dais_3466
Nikolić PM, Paraskevopoulos KM, Vujatović SS, Nikolić MV, Chatzistavrou X, Pavlidou E, Ivetić T, Blagojević VD, Bojičić AI, Dinulović D. Optical properties of PbTe and PbSnTe doped with Cr. in Journal of Alloys and Compounds. 2009;480(2):893-896.
doi:10.1016/j.jallcom.2009.02.067
https://hdl.handle.net/21.15107/rcub_dais_3466 .
Nikolić, Pantelija M., Paraskevopoulos, Konstantinos M., Vujatović, Stevan S., Nikolić, Maria Vesna, Chatzistavrou, Xanthippi, Pavlidou, Eleni, Ivetić, Tamara, Blagojević, Vladimir D., Bojičić, Aleksandar I., Dinulović, D., "Optical properties of PbTe and PbSnTe doped with Cr" in Journal of Alloys and Compounds, 480, no. 2 (2009):893-896,
https://doi.org/10.1016/j.jallcom.2009.02.067 .,
https://hdl.handle.net/21.15107/rcub_dais_3466 .
3
3
3

Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr

Vasiljević Radović, Dana; Nikolić, Pantelija M.; Radulović, Katarina; Bojičić, Aleksandar I.; Luković, Danijela; Savić, Slavica; Vujatović, Stevan S.; Blagojević, Vladimir D.; Lukić, Lazar S.; Urošević, D.

(E D P Sciences, Les Ulis Cedex A, 2005)

TY  - JOUR
AU  - Vasiljević Radović, Dana
AU  - Nikolić, Pantelija M.
AU  - Radulović, Katarina
AU  - Bojičić, Aleksandar I.
AU  - Luković, Danijela
AU  - Savić, Slavica
AU  - Vujatović, Stevan S.
AU  - Blagojević, Vladimir D.
AU  - Lukić, Lazar S.
AU  - Urošević, D.
PY  - 2005
UR  - https://dais.sanu.ac.rs/123456789/9554
AB  - A high purity single crystal Ge with a (1 1 1) orientation was doped with Cr. A thin film of Cr was evaporated and then diffused into Ge substrate. The photoacoustic PA amplitude and phase spectra were measured and numerically analyzed. The substitution of Cr in Ge produces a compensation effect.
PB  - E D P Sciences, Les Ulis Cedex A
T2  - Journal de physique IV
T1  - Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr
SP  - 435
EP  - 438
VL  - 125
DO  - 10.1051/jp4:2005125102
UR  - https://hdl.handle.net/21.15107/rcub_dais_9554
ER  - 
@article{
author = "Vasiljević Radović, Dana and Nikolić, Pantelija M. and Radulović, Katarina and Bojičić, Aleksandar I. and Luković, Danijela and Savić, Slavica and Vujatović, Stevan S. and Blagojević, Vladimir D. and Lukić, Lazar S. and Urošević, D.",
year = "2005",
abstract = "A high purity single crystal Ge with a (1 1 1) orientation was doped with Cr. A thin film of Cr was evaporated and then diffused into Ge substrate. The photoacoustic PA amplitude and phase spectra were measured and numerically analyzed. The substitution of Cr in Ge produces a compensation effect.",
publisher = "E D P Sciences, Les Ulis Cedex A",
journal = "Journal de physique IV",
title = "Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr",
pages = "435-438",
volume = "125",
doi = "10.1051/jp4:2005125102",
url = "https://hdl.handle.net/21.15107/rcub_dais_9554"
}
Vasiljević Radović, D., Nikolić, P. M., Radulović, K., Bojičić, A. I., Luković, D., Savić, S., Vujatović, S. S., Blagojević, V. D., Lukić, L. S.,& Urošević, D.. (2005). Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr. in Journal de physique IV
E D P Sciences, Les Ulis Cedex A., 125, 435-438.
https://doi.org/10.1051/jp4:2005125102
https://hdl.handle.net/21.15107/rcub_dais_9554
Vasiljević Radović D, Nikolić PM, Radulović K, Bojičić AI, Luković D, Savić S, Vujatović SS, Blagojević VD, Lukić LS, Urošević D. Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr. in Journal de physique IV. 2005;125:435-438.
doi:10.1051/jp4:2005125102
https://hdl.handle.net/21.15107/rcub_dais_9554 .
Vasiljević Radović, Dana, Nikolić, Pantelija M., Radulović, Katarina, Bojičić, Aleksandar I., Luković, Danijela, Savić, Slavica, Vujatović, Stevan S., Blagojević, Vladimir D., Lukić, Lazar S., Urošević, D., "Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr" in Journal de physique IV, 125 (2005):435-438,
https://doi.org/10.1051/jp4:2005125102 .,
https://hdl.handle.net/21.15107/rcub_dais_9554 .

Photopyropiezoelectric elastic bending method

Todorović, D. M.; Nikolić, Pantelija M.; Bojičić, Aleksandar I.; Smiljanić, Miloljub; Vasiljević Radović, Dana; Radulović, Katarina

(AIP Publishing, 2003)

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Bojičić, Aleksandar I.
AU  - Smiljanić, Miloljub
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2003
UR  - https://dais.sanu.ac.rs/123456789/9553
AB  - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
PB  - AIP Publishing
C3  - Review of Scientific Instruments
T1  - Photopyropiezoelectric elastic bending method
SP  - 635
EP  - 638
VL  - 74
IS  - 1
DO  - 10.1063/1.1520317
UR  - https://hdl.handle.net/21.15107/rcub_dais_9553
ER  - 
@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Bojičić, Aleksandar I. and Smiljanić, Miloljub and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2003",
abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.",
publisher = "AIP Publishing",
journal = "Review of Scientific Instruments",
title = "Photopyropiezoelectric elastic bending method",
pages = "635-638",
volume = "74",
number = "1",
doi = "10.1063/1.1520317",
url = "https://hdl.handle.net/21.15107/rcub_dais_9553"
}
Todorović, D. M., Nikolić, P. M., Bojičić, A. I., Smiljanić, M., Vasiljević Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments
AIP Publishing., 74(1), 635-638.
https://doi.org/10.1063/1.1520317
https://hdl.handle.net/21.15107/rcub_dais_9553
Todorović DM, Nikolić PM, Bojičić AI, Smiljanić M, Vasiljević Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638.
doi:10.1063/1.1520317
https://hdl.handle.net/21.15107/rcub_dais_9553 .
Todorović, D. M., Nikolić, Pantelija M., Bojičić, Aleksandar I., Smiljanić, Miloljub, Vasiljević Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638,
https://doi.org/10.1063/1.1520317 .,
https://hdl.handle.net/21.15107/rcub_dais_9553 .
1

Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure

Todorović, D. M.; Nikolić, Pantelija M.; Smiljanić, Miloljub; Bojičić, Aleksandar I.; Vasiljević Radović, Dana; Radulović, Katarina

(IEEE Computer Society, 2002)

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Smiljanić, Miloljub
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2002
UR  - https://dais.sanu.ac.rs/123456789/9552
AB  - The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.
PB  - IEEE Computer Society
C3  - 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
T1  - Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure
SP  - 231
EP  - 234
VL  - 1
DO  - 10.1109/MIEL.2002.1003182
UR  - https://hdl.handle.net/21.15107/rcub_dais_9552
ER  - 
@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Smiljanić, Miloljub and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2002",
abstract = "The metal-semiconductor (MS) junction is investigated by new method based on two techniques: the acphotovoltage and pyro-piezo-electric technique. The sample with metal-semiconductor-metal configuration was attached to the pyro(piezo)electric detector and ac-voltages can be measured. The photovoltage and pyro-piezo-electric effects are investigated as a function of the modulation frequency of excitation optical beam. A theoretical model for a metal - semiconductor - metal - pyro(piezo)electric system is given including the space-charge regions (SCR) and electronic states on the semiconductor surfaces, and thermodifussion, thermoelastic and electronic deformation effects in semiconductor.",
publisher = "IEEE Computer Society",
journal = "23rd International Conference on Microelectronics, MIEL 2002 - Proceedings",
title = "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure",
pages = "231-234",
volume = "1",
doi = "10.1109/MIEL.2002.1003182",
url = "https://hdl.handle.net/21.15107/rcub_dais_9552"
}
Todorović, D. M., Nikolić, P. M., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2002). Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings
IEEE Computer Society., 1, 231-234.
https://doi.org/10.1109/MIEL.2002.1003182
https://hdl.handle.net/21.15107/rcub_dais_9552
Todorović DM, Nikolić PM, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure. in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings. 2002;1:231-234.
doi:10.1109/MIEL.2002.1003182
https://hdl.handle.net/21.15107/rcub_dais_9552 .
Todorović, D. M., Nikolić, Pantelija M., Smiljanić, Miloljub, Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Photo-pyro-piezo-electric elastic bending method: Investigation of metalsemiconductor structure" in 23rd International Conference on Microelectronics, MIEL 2002 - Proceedings, 1 (2002):231-234,
https://doi.org/10.1109/MIEL.2002.1003182 .,
https://hdl.handle.net/21.15107/rcub_dais_9552 .