Photopyropiezoelectric elastic bending method
Samo za registrovane korisnike
2003
Autori
Todorović, D. M.Nikolić, Pantelija M.
Bojičić, Aleksandar I.
Smiljanić, Miloljub
Vasiljević Radović, Dana
Radulović, Katarina
Konferencijski prilog (Objavljena verzija)
,
American Institute of Physics
Metapodaci
Prikaz svih podataka o dokumentuApstrakt
A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electr...onic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.
Ključne reči:
thermal diffusivity / photoacoustic effect / thermal effusivityIzvor:
Review of Scientific Instruments, 2003, 74, 1, 635-638Izdavač:
- AIP Publishing
Finansiranje / projekti:
- Ministry of Science, Technology and Development, Republic of Serbia, Grant No. I.T.1.04.0062.B
Napomena:
- Conference: 12th International Conference on Photoacoustic and Photothermal Phenomena (12 ICPPP) Location: Toronto, Canada; Date: JUN 24-27, 2002
DOI: 10.1063/1.1520317
ISSN: 0034-6748; 1089-7623
WoS: 000180451900101
Scopus: 2-s2.0-0037283202
Institucija/grupa
Институт техничких наука САНУ / Institute of Technical Sciences of SASATY - CONF AU - Todorović, D. M. AU - Nikolić, Pantelija M. AU - Bojičić, Aleksandar I. AU - Smiljanić, Miloljub AU - Vasiljević Radović, Dana AU - Radulović, Katarina PY - 2003 UR - https://dais.sanu.ac.rs/123456789/9553 AB - A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam. PB - AIP Publishing C3 - Review of Scientific Instruments T1 - Photopyropiezoelectric elastic bending method SP - 635 EP - 638 VL - 74 IS - 1 DO - 10.1063/1.1520317 UR - https://hdl.handle.net/21.15107/rcub_dais_9553 ER -
@conference{ author = "Todorović, D. M. and Nikolić, Pantelija M. and Bojičić, Aleksandar I. and Smiljanić, Miloljub and Vasiljević Radović, Dana and Radulović, Katarina", year = "2003", abstract = "A method of investigation of semiconductors and metal–semiconductor structures based on two techniques: The elastic bending technique and pyropiezoelectric (PPE) technique was presented. The method was demonstrated on a metal–semiconductor–metal (MSM) structure, which is attached to a PPE detector. Two different ac voltages can be measured: One on the electrodes of MSM structure—the ac-photovoltage, and another on the electrodes of the PPE detector—the PPE voltage. The ac photovoltage is a consequence of the photogenerated plasma processes in the sample (MSM structure). Photogenerated plasma waves in a semiconductor are followed by the thermal and elastic waves (the elastic bending). Then, the pyroelectric voltage is a consequence of the thermal processes and the piezoelectric voltage is a consequence of elastic bending in the sample-PPE detector system. A theoretical model for a metal–semiconductor–metal-pyro(piezo)electric system is given including the space-charge regions and electronic states on the semiconductor surfaces, thermodiffusion, thermoelastic, and electronic deformation effects in a semiconductor. The photoelectric and pyropiezoelectric effects are investigated by analyzing the ac voltages as a function of the modulation frequency of excitation beam.", publisher = "AIP Publishing", journal = "Review of Scientific Instruments", title = "Photopyropiezoelectric elastic bending method", pages = "635-638", volume = "74", number = "1", doi = "10.1063/1.1520317", url = "https://hdl.handle.net/21.15107/rcub_dais_9553" }
Todorović, D. M., Nikolić, P. M., Bojičić, A. I., Smiljanić, M., Vasiljević Radović, D.,& Radulović, K.. (2003). Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments AIP Publishing., 74(1), 635-638. https://doi.org/10.1063/1.1520317 https://hdl.handle.net/21.15107/rcub_dais_9553
Todorović DM, Nikolić PM, Bojičić AI, Smiljanić M, Vasiljević Radović D, Radulović K. Photopyropiezoelectric elastic bending method. in Review of Scientific Instruments. 2003;74(1):635-638. doi:10.1063/1.1520317 https://hdl.handle.net/21.15107/rcub_dais_9553 .
Todorović, D. M., Nikolić, Pantelija M., Bojičić, Aleksandar I., Smiljanić, Miloljub, Vasiljević Radović, Dana, Radulović, Katarina, "Photopyropiezoelectric elastic bending method" in Review of Scientific Instruments, 74, no. 1 (2003):635-638, https://doi.org/10.1063/1.1520317 ., https://hdl.handle.net/21.15107/rcub_dais_9553 .