Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
Само за регистроване кориснике
1995
Аутори
Dramićanin, MiroslavRistovski, Z.
Nikolić, Pantelija M.
Vasiljević, Dana
Todorović, Dragan M.
Чланак у часопису (Објављена верзија)
Метаподаци
Приказ свих података о документуАпстракт
Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
Кључне речи:
photoacoustic measurements / heat-transmission / semiconductors / Ge single crystalИзвор:
Physical Review B, 1995, 14226-14232Издавач:
- The American Physical Society
Институција/група
Институт техничких наука САНУ / Institute of Technical Sciences of SASATY - JOUR AU - Dramićanin, Miroslav AU - Ristovski, Z. AU - Nikolić, Pantelija M. AU - Vasiljević, Dana AU - Todorović, Dragan M. PY - 1995 UR - https://dais.sanu.ac.rs/123456789/569 AB - Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity. PB - The American Physical Society T2 - Physical Review B T1 - Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal SP - 14226 EP - 14232 DO - 10.1103/PhysRevB.51.14226 UR - https://hdl.handle.net/21.15107/rcub_dais_569 ER -
@article{ author = "Dramićanin, Miroslav and Ristovski, Z. and Nikolić, Pantelija M. and Vasiljević, Dana and Todorović, Dragan M.", year = "1995", abstract = "Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.", publisher = "The American Physical Society", journal = "Physical Review B", title = "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal", pages = "14226-14232", doi = "10.1103/PhysRevB.51.14226", url = "https://hdl.handle.net/21.15107/rcub_dais_569" }
Dramićanin, M., Ristovski, Z., Nikolić, P. M., Vasiljević, D.,& Todorović, D. M.. (1995). Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B The American Physical Society., 14226-14232. https://doi.org/10.1103/PhysRevB.51.14226 https://hdl.handle.net/21.15107/rcub_dais_569
Dramićanin M, Ristovski Z, Nikolić PM, Vasiljević D, Todorović DM. Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B. 1995;:14226-14232. doi:10.1103/PhysRevB.51.14226 https://hdl.handle.net/21.15107/rcub_dais_569 .
Dramićanin, Miroslav, Ristovski, Z., Nikolić, Pantelija M., Vasiljević, Dana, Todorović, Dragan M., "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal" in Physical Review B (1995):14226-14232, https://doi.org/10.1103/PhysRevB.51.14226 ., https://hdl.handle.net/21.15107/rcub_dais_569 .