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Investigation of ion-beam modified silicon by photoacoustic method

dc.creatorTodorović, D. M.
dc.creatorNikolić, Pantelija M.
dc.creatorElazar, J.
dc.creatorSmiljanić, M.
dc.creatorBojičić, Aleksandar I.
dc.creatorVasiljević Radović, Dana
dc.creatorRadulović, Katarina
dc.date.accessioned2018-09-11T23:23:25Z
dc.date.available2018-09-11T23:23:25Z
dc.date.issued2000
dc.identifier.isbn0-7803-5235-1
dc.identifier.urihttps://dais.sanu.ac.rs/123456789/3869
dc.description.abstractThermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.en
dc.publisherIEEE
dc.rightsrestrictedAccess
dc.source2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
dc.subjectphotoacoustic method
dc.subjection-modified silicon
dc.titleInvestigation of ion-beam modified silicon by photoacoustic methoden
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractТодоровић, Д. М.; Смиљанић, М.; Бојичић, Aлександар И.; Радуловић, Катарина; Елазар, Ј.; Васиљевић Радовић, Дана; Николић, Пантелија;
dc.citation.spage247
dc.citation.epage250
dc.citation.volume1
dc.identifier.doi10.1109/ICMEL.2000.840566
dc.identifier.scopus2-s2.0-0033299508
dc.type.versionpublishedVersion
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_dais_3869


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