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dc.creatorAminirastabi, Habibollah
dc.creatorXue, Hao
dc.creatorMitić, Vojislav V.
dc.creatorLazović, Goran
dc.creatorJi, Guoli
dc.creatorPeng, Dongliang
dc.date.accessioned2019-12-26T14:30:54Z
dc.date.available2019-12-26T14:30:54Z
dc.date.issued2020
dc.identifier.issn0254-0584
dc.identifier.urihttp://www.sciencedirect.com/science/article/pii/S0254058419310764
dc.identifier.urihttps://dais.sanu.ac.rs/123456789/6886
dc.description.abstractThe grain size and the ferroelectric morphology are the two most important factors in the research and development of advanced dielectric devices. It is important to synthesize nanostructures in order to achieve optimal grain size and inhibit grain growth while controlling the sintering parameters. It is also important to find new methods to study the grain growth during densification. BaTiO3 films were successfully obtained via the sol-gel spin coating method. In this paper, we report the deposition of nanostructured BaTiO3 thin film by spin coating of sol-gel precursors. The densification, grain growth and microstructure evolution have been studied. Moreover, a novel physical and mathematical fractal analysis have been applied successfully to the densification and nano grain growth of BaTiO3 thin film. The discrepancy between the fractal dimension and the grain growth with increasing temperatures and soaking time are presented and discussed.en
dc.languageen
dc.publisherElsevier
dc.relation.isversionofhttps://hdl.handle.net/21.15107/rcub_dais_6887
dc.rightsrestrictedAccess
dc.sourceMaterials Chemistry and Physics
dc.subjectBaTiO
dc.subjectfractal dimension
dc.subjectgrain growth
dc.subjectself-similarity
dc.subjectsol-gel route
dc.titleNovel fractal analysis of nanograin growth in BaTiO3 thin filmen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractЛазовић, Горан; Xуе, Хао; Пенг, Донглианг; Митић, Војислав В.; Aминирастаби, Хабиболлах; Ји, Гуоли;
dc.citation.spage122261
dc.citation.volume239
dc.identifier.wos000503099500141
dc.identifier.doi10.1016/j.matchemphys.2019.122261
dc.identifier.scopus2-s2.0-85073346699
dc.description.otherPeer-reviewed manuscript: [https://hdl.handle.net/21.15107/rcub_dais_6887]
dc.type.versionpublishedVersion
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_dais_6886


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Приказ основних података о документу