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dc.creatorShcherba, Ivan D.
dc.creatorUskoković, Dragan
dc.creatorSacharevych, M.
dc.creatorJatcyk, Bohdan M.
dc.date.accessioned2017-06-10T15:45:07Z
dc.date.issued2014
dc.identifier.urihttp://dais.sanu.ac.rs/123456789/559
dc.description.abstractThe valence band electronic structure of compounds with the HfFe2S2 crystal lattice type has been established for the first time based on X-ray emission spectroscopy measurements. Band structure and theoretical spectra of X-ray emission bands of atoms located in non-equivalent crystallographic positions are calculated by means of the LMTO method. A satisfactory agreement between theoretical and experimental data is achieved. As it can be seen from the performed calculations and experimental data, the s-states of Si hybridize with the p-states Sc (Hf) and Fe and are located at the bottom of valence band. Contribution of the s-symmetry electrons to the chemical bond is substantially different for Si atoms located in non-equivalent crystallographic positions. 57Fe Mossbauer absorption measurements confirm iron atoms occupying non-equivalent positions in the crystal lattice.en
dc.format(2014) 93-93
dc.formatapplication/pdf
dc.languageen
dc.publisherBelgrade : Materials Research Society of Serbia
dc.rightsopenAccess
dc.sourceThe Sixteenth Annual Conference YUCOMAT 2014: Programme and the Book of Abstractsen
dc.subjectScFe2Si2
dc.subjectHfFe2S2
dc.subjectX-ray emission
dc.subjectMossbauer spectra
dc.titleX-ray emission and Mossbauer spectra and electronic structure of ScFe2Si2 and HfFe2S2compoundsen
dc.typeconferenceObject
dc.rights.licenseBY-NC-ND
dcterms.abstractЈатцyк, Б. М.; Ускоковић, Драган; Схцхерба, Иван; Сацхаревyцх, М.;
dc.citation.spage93
dc.citation.epage93
dc.type.versionpublishedVersion
dc.identifier.fulltexthttp://dais.sanu.ac.rs/bitstream/id/21539/556.pdf


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