Investigation of ion-beam modified silicon by photoacoustic method
АуториTodorović, D. M.
Bojičić, Aleksandar I.
Vasiljević Radović, Dana
Конференцијски прилог (Објављена верзија)
МетаподациПриказ свих података о документу
Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.
Кључне речи:photoacoustic method / ion-modified silicon
Извор:2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 2000, 1, 247-250