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dc.creatorTodorović, D. M.
dc.creatorNikolić, Pantelija M.
dc.creatorSmiljanić, M.
dc.creatorPetrović, R.
dc.creatorBojičić, Aleksandar I.
dc.creatorVasiljević Radović, Dana
dc.creatorRadulović, Katarina
dc.date.accessioned2018-09-11T23:22:22Z
dc.date.available2018-09-11T23:22:22Z
dc.date.issued2000
dc.identifier.isbn0-7803-5235-1
dc.identifier.urihttps://dais.sanu.ac.rs/123456789/3868
dc.description.abstractThe photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE.en
dc.publisherIEEE
dc.rightsrestrictedAccess
dc.source2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
dc.subjectSchottky barrier
dc.subjectphotoacoustic effects
dc.subjectthermal transport
dc.subjectelectronic transport
dc.subjectsemiconductors
dc.titleThe Schottky barrier contribution to photoacoustic effect in Au-Si systemen
dc.typeconferenceObject
dc.rights.licenseARR
dcterms.abstractБојичић, Aлександар И.; Николић, Пантелија; Васиљевић Радовић, Дана; Тодоровић, Д. М.; Радуловић, Катарина; Смиљанић, М.; Петровић, Р.;
dc.citation.spage189
dc.citation.epage192
dc.citation.volume1
dc.identifier.doi10.1109/ICMEL.2000.840552
dc.identifier.scopus2-s2.0-84906315176
dc.type.versionpublishedVersion
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_dais_3868


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Приказ основних података о документу