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dc.creatorNikolić, Pantelija M.
dc.creatorParaskevopoulos, Konstantinos M.
dc.creatorZorba, Triantafyllia T.
dc.creatorVasiljević, Zorka Ž.
dc.creatorPavlidou, Eleni
dc.creatorVujatović, Stevan S.
dc.creatorBlagojevic, Vladimir
dc.creatorAleksić, Obrad S.
dc.creatorBojičić, Aleksandar I.
dc.creatorNikolić, Maria Vesna
dc.date.accessioned2018-07-25T13:21:57Z
dc.date.available2018-07-25T13:21:57Z
dc.date.issued2015
dc.identifier.issn1687-8434
dc.identifier.urihttp://dais.sanu.ac.rs/123456789/3544
dc.description.abstractPbTe single crystals doped with monovalent Au or Cu were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for all samples and plasma minima were registered. These experimental spectra were numerically analyzed and optical parameters were calculated. All the samples of PbTe doped with Au or Cu were of the "n" type. The properties of these compositions were analyzed and compared with PbTe containing other dopants. The samples of PbTe doped with only 3.3 at% Au were the best among the PbTe + Au samples having the lowest plasma frequency and the highest mobility of free carriers-electrons, while PbTe doped with Cu was the opposite. Samples with the lowest Cu concentration of 0.23 at% Cu had the best properties. Thermal diffusivity and electronic transport properties of the same PbTe doped samples were also investigated using a photoacoustic (PA) method with the transmission detection configuration. The results obtained with the far infrared and photoacoustic characterization of PbTe doped samples were compared and discussed. Both methods confirmed that when PbTe was doped with 3.3 at% Au, thermoelectric and electrical properties of this doped semiconductor were both significantly improved, so Au as a dopant in PbTe could be used as a new high quality thermoelectric material. © 2015 Pantelija M. Nikolic et al.
dc.publisherHindawi
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45007/RS//
dc.relationinfo:eu-repo/grantAgreement/MESTD/Integrated and Interdisciplinary Research (IIR or III)/45014/RS//
dc.rightsopenAccess
dc.sourceAdvances in Materials Science and Engineering
dc.titleLead telluride doped with Au as a very promising material for thermoelectric applications
dc.typearticleen
dc.rights.licenseBY
dc.citation.spage283782
dc.citation.volume2015
dc.identifier.wos000353152000001
dc.identifier.doi10.1155/2015/283782
dc.identifier.scopus2-s2.0-84928501039
dc.type.versionpublishedVersion
dc.identifier.fulltexthttp://dais.sanu.ac.rs/bitstream/handle/123456789/3544/Nikolic_2015_Advances-in-Materials-Science-and-Engineering_2015.pdf


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