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dc.creatorMitić, Vojislav V.
dc.creatorNikolić, Zoran S.
dc.creatorPavlović, Vladimir B.
dc.creatorPaunović, Vesna
dc.creatorMiljković, Miroslav
dc.creatorJordović, Branka
dc.creatorŽivković, Ljiljana
dc.date.accessioned2018-06-22T19:26:46Z
dc.date.available2018-06-22T19:26:46Z
dc.date.issued2010
dc.identifier.issn1551-2916
dc.identifier.urihttps://dais.sanu.ac.rs/123456789/3437
dc.description.abstractIn this article, ytterbium and erbium oxides are used as doping materials for barium titanate (BaTiO3) materials. The amphoteric behavior of these rare-earth ions leads to the increase of dielectric permittivity and decrease of dielectric losses. BaTiO3 ceramics doped with 0.01-0.5 wt% of Yb2O3 and Er2O3 were prepared by conventional solid-state procedure and sintered at 1320°C for 4 h. In BaTiO3 doped with a low content of rare-earth ions (0.01 wt%) the grain size ranged between 10 and 25 μm. With the higher dopant concentration of 0.5 wt%, the abnormal grain growth is inhibited and the grain size ranged between 2 and 10 μm. The measurements of capacitance and dielectric losses as a function of frequency and temperature have been carried out in order to correlate the microstructure and dielectric properties of doped BaTiO 3 ceramics. The temperature dependence of the dielectric constant as a function of dopant amount has been investigated. © 2009 The American Ceramic Society.en
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/142011/RS//
dc.rightsrestrictedAccess
dc.sourceJournal of the American Ceramic Society
dc.subjectytterbium oxides
dc.subjecterbium oxides
dc.subjectdoping materials
dc.subjectbarium titanate
dc.titleInfluence of rare-earth dopants on barium titanate ceramics microstructure and corresponding electrical propertiesen
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractНиколић, Зоран С.; Миљковић, Мирослав; Живковић, Љиљана; Јордовић, Бранка; Митић, Војислав В.; Павловић, Владимир Б.; Пауновић, Весна; Инфлуенце оф раре-еартх допантс он бариум титанате церамицс мицроструцтуре анд цорреспондинг елецтрицал пропертиес;
dc.citation.spage132
dc.citation.epage137
dc.citation.volume93
dc.citation.issue1
dc.identifier.wos000273392900025
dc.identifier.doi10.1111/j.1551-2916.2009.03309.x
dc.identifier.scopus2-s2.0-73149102073
dc.type.versionpublishedVersion
dc.identifier.rcubhttps://hdl.handle.net/21.15107/rcub_dais_3437


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Приказ основних података о документу