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dc.creatorNikolić, Pantelija M.
dc.creatorVujatović, Stevan S.
dc.creatorParaskevopoulos, Konstantinos M.
dc.creatorPavlidou, Eleni
dc.creatorZorba, Triantafyllia T.
dc.creatorIvetić, Tamara
dc.creatorCvetković, Olga
dc.creatorAleksić, Obrad S.
dc.creatorBlagojević, Vladimir D.
dc.creatorNikolić, Maria Vesna
dc.date.accessioned2018-06-22T19:13:24Z
dc.date.available2018-06-22T19:13:24Z
dc.date.issued2010
dc.identifier.issn1842-6573
dc.identifier.urihttp://dais.sanu.ac.rs/123456789/3433
dc.identifier.urihttps://oam-rc.inoe.ro/download.php?idu=942
dc.description.abstractSingle crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
dc.publisherBucharest: Integra Natura Omnia et Aeterna
dc.relationinfo:eu-repo/grantAgreement/MESTD/MPN2006-2010/142011/RS//
dc.rightsopenAccess
dc.sourceOptoelectronics and Advanced Materials, Rapid Communications
dc.subjectinfrared properties
dc.subjectAg-doping
dc.subjectHg-doping
dc.subjectPbTe
dc.titleFar infrared properties of PbTe doped with Hg
dc.typearticleen
dc.rights.licenseARR
dcterms.abstractAлексић, Обрад С.; Николић, Пантелија М.; Вујатовић, Стеван С.; Параскевопоулос, К. М.; Павлидоу, Е.; Зорба, Т. Т.; Иветић, Тамара; Цветковић, О.; Благојевић, В.; Николић, Мариа Весна;
dc.citation.spage151
dc.citation.epage153
dc.citation.volume4
dc.citation.issue2
dc.identifier.scopus2-s2.0-77952056143
dc.type.versionpublishedVersion
dc.identifier.fulltexthttp://dais.sanu.ac.rs/bitstream/handle/123456789/3433/2NIKOLIC.pdf


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