Far infrared properties of PbTe doped with Hg
АуториNikolić, Pantelija M.
Vujatović, Stevan S.
Paraskevopoulos, Konstantinos M.
Zorba, Triantafyllia T.
Aleksić, Obrad S.
Blagojević, Vladimir D.
Nikolić, Maria Vesna
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Single crystal samples of PbTe doped with Hg were grown using the Bridgman method. Far infrared reflectivity spectra were measured at room temperature for samples with 0.5 at. % Hg; 0.9 at. % Hg and 1.4 at. % Hg. The plasma frequency decreased when PbTe was doped with Hg and it was lowest for the PbTe sample doped with 0.5 at. % Hg. The values of the determined optical free carrier mobility increased and was the highest for PbTe doped with 0.5 at. % Hg.
Кључне речи:infrared properties / Ag-doping / Hg-doping / PbTe
Извор:Optoelectronics and Advanced Materials, Rapid Communications, 2010, 4, 2, 151-153
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