@article{
author = "Shcherba, I. D. and Antonov, V. N. and Zhak, O. V. and Bekenov, L. V. and Kovalska, M. V. and Noga, H. and Uskoković, Dragan and Yatcyk, B. M.",
year = "2019",
url = "http://physics.lnu.edu.ua/jps/2019/2/abs/a2301-7.html, http://dais.sanu.ac.rs/123456789/6952",
abstract = "The valence band electronic structure of HfFe2Si2 has been established for the first time based on X-ray emission spectroscopy measurements. The band structure and X-ray emission spectra have been also obtained theoretically using the ab initio LMTO method in the non-relativistic approximation. The electron configuration of Si in the compound HfFe2Si2 can be described as $s^{1.1}p^{1.5}$. The theoretical and experimental results are in satisfactory agreement.",
publisher = "West Ukrainian Physical Society",
journal = "Journal of Physical Studies",
title = "Electronic structure and X-ray spectroscopic properties of the HfFe2Si2 compound",
volume = "23",
number = "2",
doi = "10.30970/jps.23.2301"
}