TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Smiljanić, M.
AU  - Petrović, R.
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://dais.sanu.ac.rs/123456789/3868
AB  - The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE.
PB  - IEEE
C3  - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - The Schottky barrier contribution to photoacoustic effect in Au-Si system
SP  - 189
EP  - 192
VL  - 1
DO  - 10.1109/ICMEL.2000.840552
UR  - https://hdl.handle.net/21.15107/rcub_dais_3868
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Smiljanić, M. and Petrović, R. and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "The photoacoustic effect in metal-semiconductor system, i.e., the influence of Schottky barrier on the thermal and electronic transport processes in semiconductor was investigated. The amplitude and phase spectra were measured for dependence on the modulation frequency of excitation optical beam, using the PA frequency transmission technique. Thermal, elastic and electronic transport parameters were obtained by the analysis of experimental and theoretical PA signals, including the Schottky barrier effect, for a metal film-semiconductor substrate sample. © 1999 IEEE.",
publisher = "IEEE",
journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "The Schottky barrier contribution to photoacoustic effect in Au-Si system",
pages = "189-192",
volume = "1",
doi = "10.1109/ICMEL.2000.840552",
url = "https://hdl.handle.net/21.15107/rcub_dais_3868"
}

Todorović, D. M., Nikolić, P. M., Smiljanić, M., Petrović, R., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2000). The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE., 1, 189-192.
https://doi.org/10.1109/ICMEL.2000.840552
https://hdl.handle.net/21.15107/rcub_dais_3868

Todorović DM, Nikolić PM, Smiljanić M, Petrović R, Bojičić AI, Vasiljević Radović D, Radulović K. The Schottky barrier contribution to photoacoustic effect in Au-Si system. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:189-192.
doi:10.1109/ICMEL.2000.840552
https://hdl.handle.net/21.15107/rcub_dais_3868 .

Todorović, D. M., Nikolić, Pantelija M., Smiljanić, M., Petrović, R., Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "The Schottky barrier contribution to photoacoustic effect in Au-Si system" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):189-192,
https://doi.org/10.1109/ICMEL.2000.840552 .,
https://hdl.handle.net/21.15107/rcub_dais_3868 .

TY  - CONF
AU  - Todorović, D. M.
AU  - Nikolić, Pantelija M.
AU  - Elazar, J.
AU  - Smiljanić, M.
AU  - Bojičić, Aleksandar I.
AU  - Vasiljević Radović, Dana
AU  - Radulović, Katarina
PY  - 2000
UR  - https://dais.sanu.ac.rs/123456789/3869
AB  - Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.
PB  - IEEE
C3  - 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
T1  - Investigation of ion-beam modified silicon by photoacoustic method
SP  - 247
EP  - 250
VL  - 1
DO  - 10.1109/ICMEL.2000.840566
UR  - https://hdl.handle.net/21.15107/rcub_dais_3869
ER  - 

@conference{
author = "Todorović, D. M. and Nikolić, Pantelija M. and Elazar, J. and Smiljanić, M. and Bojičić, Aleksandar I. and Vasiljević Radović, Dana and Radulović, Katarina",
year = "2000",
abstract = "Thermal, elastic and electronic transport properties of ion-modified silicon samples were investigated by a photoacoustic frequency transmission technique. The experimental photoacoustic data vs the modulating frequency were measured and analyzed. The experimental results show a clear influence of the process of ion-modification on the photoacoustic signal. The thermal, elastic and electronic transport parameters of ion-modified semiconductors were obtained by comparing the experimental and calculated theoretical photoacoustic signal which provide an indicator of the degree of modification. © 1999 IEEE.",
publisher = "IEEE",
journal = "2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings",
title = "Investigation of ion-beam modified silicon by photoacoustic method",
pages = "247-250",
volume = "1",
doi = "10.1109/ICMEL.2000.840566",
url = "https://hdl.handle.net/21.15107/rcub_dais_3869"
}

Todorović, D. M., Nikolić, P. M., Elazar, J., Smiljanić, M., Bojičić, A. I., Vasiljević Radović, D.,& Radulović, K.. (2000). Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings
IEEE., 1, 247-250.
https://doi.org/10.1109/ICMEL.2000.840566
https://hdl.handle.net/21.15107/rcub_dais_3869

Todorović DM, Nikolić PM, Elazar J, Smiljanić M, Bojičić AI, Vasiljević Radović D, Radulović K. Investigation of ion-beam modified silicon by photoacoustic method. in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings. 2000;1:247-250.
doi:10.1109/ICMEL.2000.840566
https://hdl.handle.net/21.15107/rcub_dais_3869 .

Todorović, D. M., Nikolić, Pantelija M., Elazar, J., Smiljanić, M., Bojičić, Aleksandar I., Vasiljević Radović, Dana, Radulović, Katarina, "Investigation of ion-beam modified silicon by photoacoustic method" in 2000 22nd International Conference on Microelectronics, MIEL 2000 - Proceedings, 1 (2000):247-250,
https://doi.org/10.1109/ICMEL.2000.840566 .,
https://hdl.handle.net/21.15107/rcub_dais_3869 .